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FW907TL

Onsemi

FW907TL by Onsemi

FW907TL by Onsemi is a N/P-channel transistor with 10A max drain current, 2.5W power dissipation, and operates in enhancement mode. Ideal for applications requiring high-power switching in surface-mount configurations at up to 150 °C operating temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,316 parts In-Stock

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Digiode

USA . 2,109 parts In-Stock

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Northwest PG Solutions

USA . 51 parts In-Stock

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$3.532

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51

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TANS Electronics

Latvia . 7,992 parts In-Stock

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SupplyDigital Components

Austria . 7,066 parts In-Stock

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Problanco Electronics

Mexico . 6,049 parts In-Stock

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Kulean Microsystems

USA . 6,003 parts In-Stock

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Corphita

USA . 1,744 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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Native Components

USA . 149 parts In-Stock

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UHIMA Technologies

Türkiye . 70 parts In-Stock

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Overview

Elevate your electronic designs with the FW907TL by Onsemi, a top-quality N-CHANNEL AND P-CHANNEL transistor that promises exceptional performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this enhancement mode transistor is ideal for a wide range of applications. From power management systems to motor control circuits, this product offers unparalleled value, efficiency, and versatility. Say goodbye to subpar components and experience the difference with Onsemi's FW907TL.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This transistor has both N-channel and P-channel types, providing flexibility for different circuit applications.

Surface Mount: YES

Surface mount design allows for easy and space-efficient integration onto circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for efficient and controlled switching of the transistor.

Maximum Drain Current (Abs) (ID): 10 A

High maximum drain current of 10 A allows for handling of higher power applications.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5 W, this transistor can handle moderate power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and reliability for the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for reliable operation in various environments.

Technical Specifications

Other Function Transistors FW907TL attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

FW907TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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