Loading...

FW906-TL-E

Onsemi

FW906-TL-E by Onsemi

FW906-TL-E by Onsemi is an N-CHANNEL AND P-CHANNEL transistor with 8A max drain current and 2.5W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling such as motor control and power management systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,422 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,422

-

-

-

-

Vyrian

USA . 1,206 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,206

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 280 parts In-Stock

1+ parts

$0.254

100+ parts

-

1k+ parts

-

10k+ parts

$0.244

280

$0.254

-

-

$0.244

Northwest PG Solutions

USA . 1,798 parts In-Stock

1+ parts

$0.279

100+ parts

-

1k+ parts

-

10k+ parts

$0.246

1,798

$0.279

-

-

$0.246

Kulean Microsystems

USA . 6,797 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,797

-

-

-

-

TANS Electronics

Latvia . 5,261 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,261

-

-

-

-

Problanco Electronics

Mexico . 4,384 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,384

-

-

-

-

Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,700

-

-

-

-

SupplyDigital Components

Austria . 3,030 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,030

-

-

-

-

Corphita

USA . 785 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

785

-

-

-

-

UHIMA Technologies

Türkiye . 421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

421

-

-

-

-

Corohmni

South Africa . 183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

183

-

-

-

-

Overview

Upgrade your electronic devices with the FW906-TL-E by Onsemi. Known for producing high-quality products, Onsemi's Other Function Transistors offer superior performance and reliability. Whether you need N-CHANNEL or P-CHANNEL transistors, this surface mount transistor has you covered. Enhance your circuit designs with ease, thanks to its 8A maximum drain current and 2.5W maximum power dissipation. Perfect for a wide range of applications, this enhancement mode transistor will exceed your expectations. Experience the value and benefits that Onsemi's FW906-TL-E brings to your projects today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and compatibility with different applications.

Surface Mount: YES

Being surface mount compatible makes the product suitable for compact and space-constrained electronic designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers improved control and efficiency in managing current flow in the transistor.

Maximum Drain Current (Abs): 8 A

High maximum drain current capability enables the transistor to handle higher power loads and currents.

Maximum Power Dissipation (Abs): 2.5 W

The high power dissipation rating ensures the transistor can effectively handle heat dissipation in demanding operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable performance and efficient switching characteristics for the transistor.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows the transistor to operate in various environmental conditions without compromising performance.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish provides good solderability and reliability in connection, contributing to the overall durability of the transistor.

Technical Specifications

Other Function Transistors FW906-TL-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

FW906-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4