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FW906TL

Onsemi

FW906TL by Onsemi

FW906TL by Onsemi is a N/P-channel MOSFET with 8A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150 °C. Ideal for various electronic circuits requiring high current switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,594 parts In-Stock

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Vyrian

USA . 349 parts In-Stock

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349

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Northwest PG Solutions

USA . 1,134 parts In-Stock

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$2.906

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SupplyDigital Components

Austria . 7,892 parts In-Stock

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TANS Electronics

Latvia . 6,100 parts In-Stock

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Problanco Electronics

Mexico . 3,577 parts In-Stock

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Corphita

USA . 829 parts In-Stock

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Kulean Microsystems

USA . 653 parts In-Stock

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Corohmni

South Africa . 388 parts In-Stock

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Native Components

USA . 236 parts In-Stock

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UHIMA Technologies

Türkiye . 124 parts In-Stock

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Overview

Upgrade your electronic devices with the FW906TL by Onsemi, a high-quality N-CHANNEL AND P-CHANNEL transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a wide range of applications. Whether you need to control power flow or amplify signals, the FW906TL delivers outstanding results. With its enhancement mode operating mode and maximum drain current of 8A, this transistor provides unmatched value and benefits to customers looking for top-notch quality and efficiency. Unlock the potential of your projects with the FW906TL by Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile use in different circuit configurations.

Surface Mount: YES

Surface mount capability makes it easy to integrate into compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control over the switching characteristics of the transistor.

Maximum Drain Current (Abs): 8 A

High maximum drain current allows for handling of larger loads or currents.

Maximum Power Dissipation (Abs): 2.5 W

Good power dissipation capability ensures the transistor can operate reliably under high loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and efficiency in a compact design.

Maximum Operating Temperature: 150 °C

High maximum operating temperature makes this transistor suitable for a wide range of applications.

Maximum Drain Current (ID): 8 A

Having a maximum drain current of 8 A ensures that the transistor can handle high current requirements.

Technical Specifications

Other Function Transistors FW906TL attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

FW906TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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