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FW905-TL-E

Onsemi

FW905-TL-E by Onsemi

FW905-TL-E by Onsemi is a N/P-channel transistor with 7A max drain current and 2.5W power dissipation. It operates in enhancement mode with MOSFET technology, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs needing efficient power management.

Median Price

$0.630

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

$0.608

1k+ parts

$0.504

10k+ parts

$0.450

8,000

-

$0.608

$0.504

$0.450

DigiKey

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.760

10k+ parts

-

8,000

-

-

$0.760

-

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

8,000

-

-

$0.630

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,787 parts In-Stock

1+ parts

$0.473

100+ parts

-

1k+ parts

-

10k+ parts

-

1,787

$0.473

-

-

-

Vyrian

USA . 457 parts In-Stock

1+ parts

$0.498

100+ parts

-

1k+ parts

-

10k+ parts

-

457

$0.498

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 57 parts In-Stock

1+ parts

$0.448

100+ parts

-

1k+ parts

-

10k+ parts

-

57

$0.448

-

-

-

Corohmni

South Africa . 468 parts In-Stock

1+ parts

$0.498

100+ parts

-

1k+ parts

-

10k+ parts

-

468

$0.498

-

-

-

Native Components

USA . 966 parts In-Stock

1+ parts

$0.519

100+ parts

-

1k+ parts

-

10k+ parts

-

966

$0.519

-

-

-

Component Stockers USA

USA . 20,427 parts In-Stock

1+ parts

$0.520

100+ parts

$0.480

1k+ parts

$0.440

10k+ parts

-

20,427

$0.520

$0.480

$0.440

-

Northwest PG Solutions

USA . 508 parts In-Stock

1+ parts

$0.571

100+ parts

-

1k+ parts

-

10k+ parts

-

508

$0.571

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 20,111 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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20,111

-

-

-

-

Problanco Electronics

Mexico . 4,325 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,325

-

-

-

-

TANS Electronics

Latvia . 4,013 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,013

-

-

-

-

Kulean Microsystems

USA . 3,060 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,060

-

-

-

-

SupplyDigital Components

Austria . 1,002 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,002

-

-

-

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UHIMA Technologies

Türkiye . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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870

-

-

-

-

Overview

Unlock the power of high-quality semiconductor technology with the FW905-TL-E by Onsemi. Manufactured by a trusted industry leader, this N-channel and P-channel transistor offers enhanced performance and reliability for a wide range of applications. With a maximum drain current of 7A and operating temperature of 150 °C, this surface-mount transistor provides superior efficiency and durability. Whether you're designing automotive electronics or industrial machinery, the FW905-TL-E delivers exceptional value and performance to meet your needs. Experience the benefits of cutting-edge technology with Onsemi's FW905-TL-E transistor.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This product offers both N-channel and P-channel types, making it versatile and suitable for a variety of circuit designs.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration into PCBs, saving space and simplifying assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures efficient performance and precise control over the transistor's characteristics.

Maximum Drain Current (Abs) (ID): 7 A

With a high maximum drain current, this transistor can handle high-power applications effectively.

Maximum Power Dissipation (Abs): 2.5 W

The low maximum power dissipation ensures that the transistor operates reliably without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers improved performance and efficiency compared to other transistor technologies.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments without compromising performance.

Terminal Finish: TIN BISMUTH

The use of tin bismuth terminal finish enhances the reliability and durability of the transistor's connections.

Technical Specifications

Other Function Transistors FW905-TL-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Trade Compliance

FW905-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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