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5HP01C-TB-H

Onsemi

5HP01C-TB-H by Onsemi

5HP01C-TB-H by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring single configuration, such as enhancement mode operation in surface mount setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 4,941 parts In-Stock

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Digiode

USA . 2,128 parts In-Stock

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France . 1,539 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 310 parts In-Stock

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$19.778

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Ampacity Inc.

Singapore . 1,176 parts In-Stock

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$56.050

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Component Stockers USA

USA . 510 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,971 parts In-Stock

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Problanco Electronics

Mexico . 6,524 parts In-Stock

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Corphita

USA . 958 parts In-Stock

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UHIMA Technologies

Türkiye . 872 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

USA . 803 parts In-Stock

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Kulean Microsystems

USA . 759 parts In-Stock

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Corohmni

South Africa . 65 parts In-Stock

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TANS Electronics

Latvia . 17 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience the superior quality and reliability of the 5HP01C-TB-H by Onsemi, a top-tier manufacturer known for their cutting-edge semiconductor technology. This P-channel transistor offers versatile applications in various electronic devices, providing enhanced performance and efficiency. With a high power dissipation capability and operating temperature of up to 150°C, this transistor is designed to meet the demands of modern electronics. Trust Onsemi to deliver exceptional value and innovation with the 5HP01C-TB-H, making it an essential component for your next project.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

This feature allows for efficient operation and is ideal for specific circuit requirements.

Configuration: SINGLE

The single configuration simplifies the design process and improves overall system performance.

Surface Mount: YES

The surface mount capability allows for easy integration into various electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation enhances the transistor's performance and reliability.

Maximum Drain Current (Abs) (ID): 0.07 A

The high maximum drain current allows for handling of higher power loads.

Maximum Power Dissipation (Abs): 0.25 W

With a high power dissipation capacity, this product can sustain optimal performance under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This advanced technology ensures efficient operation and longevity of the transistor.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures stability and reliability in various environments.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The terminal finish provides excellent conductivity and protection against corrosion.

Maximum Drain Current (ID): 0.07 A

The high maximum drain current capability makes this product suitable for applications requiring high power handling.

Technical Specifications

Other Function Transistors 5HP01C-TB-H attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

5HP01C-TB-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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