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5HP01C-TB-E

Onsemi

5HP01C-TB-E by Onsemi

5HP01C-TB-E by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W power dissipation. Ideal for applications requiring enhancement mode operation, surface mount capability, and operating temperatures up to 150 °C.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 273,000 parts In-Stock

1+ parts

-

100+ parts

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$0.150

273,000

-

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$0.150

Verical

USA . 186,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.110

186,000

-

-

-

$0.110

Rochester

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.428

10k+ parts

$0.381

10

-

$0.515

$0.428

$0.381

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,035 parts In-Stock

1+ parts

$0.100

100+ parts

-

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2,035

$0.100

-

-

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Digiode

USA . 242 parts In-Stock

1+ parts

$0.401

100+ parts

-

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242

$0.401

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 459 parts In-Stock

1+ parts

$0.079

100+ parts

-

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459

$0.079

-

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Corphita

USA . 857 parts In-Stock

1+ parts

$0.380

100+ parts

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857

$0.380

-

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-

Native Components

USA . 793 parts In-Stock

1+ parts

$1,398.370

100+ parts

$1,370.403

1k+ parts

$1,356.419

10k+ parts

$1,342.435

793

$1,398.370

$1,370.403

$1,356.419

$1,342.435

Northwest PG Solutions

USA . 541 parts In-Stock

1+ parts

$1,538.207

100+ parts

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541

$1,538.207

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Continental Prestige Electronics

USA . 273,000 parts In-Stock

1+ parts

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$0.079

10k+ parts

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273,000

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$0.079

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Kepictronics

USA . 42,000 parts In-Stock

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42,000

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Metaverse IC Inc.

Canada . 36,000 parts In-Stock

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36,000

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Problanco Electronics

Mexico . 7,571 parts In-Stock

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7,571

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QUARKTWIN TECHNOLOGY LTD

USA . 7,140 parts In-Stock

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7,140

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SupplyDigital Components

Austria . 3,591 parts In-Stock

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3,591

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Kulean Microsystems

USA . 3,006 parts In-Stock

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3,006

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UHIMA Technologies

Türkiye . 666 parts In-Stock

1+ parts

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666

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TANS Electronics

Latvia . 158 parts In-Stock

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158

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Overview

Unleash the power of innovation with the 5HP01C-TB-E by Onsemi! Crafted with precision and expertise, this P-CHANNEL transistor offers unparalleled performance and reliability. Perfect for a wide range of applications, this enhancement mode transistor is designed to exceed expectations. Experience the seamless integration and high efficiency of the METAL-OXIDE SEMICONDUCTOR technology. Embrace the future of electronics with the 5HP01C-TB-E, where quality meets excellence.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance and high efficiency, making them ideal for power management applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs, making them a good choice for basic electronic projects.

Surface Mount: YES

Surface mount transistors are compact and allow for high-density mounting on PCBs, saving space and making them suitable for small electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have better control over the flow of current, offering improved performance in applications requiring precise switching.

Maximum Drain Current (Abs) (ID): 0.07 A

With a maximum drain current of 0.07 A, this transistor can handle moderate power requirements, making it suitable for various low-power electronics projects.

Maximum Power Dissipation (Abs): 0.25 W

The maximum power dissipation of 0.25 W indicates that this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low power consumption, and excellent reliability, making it a popular choice for various electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperatures, making it suitable for applications where heat dissipation is a concern.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/bismuth terminal finish provides good solderability and reliability, ensuring secure connections and longevity in electronic circuits.

Maximum Drain Current (ID): 0.07 A

The specified maximum drain current of 0.07 A indicates the transistor's capability to handle current flow efficiently, making it suitable for various low-power applications.

Technical Specifications

Other Function Transistors 5HP01C-TB-E attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

5HP01C-TB-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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