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5HP01SP

Onsemi

5HP01SP by Onsemi

5HP01SP by Onsemi is a P-CHANNEL transistor with 0.07A max drain current and 0.25W max power dissipation. Ideal for applications requiring enhancement mode operation at up to 150 °C, such as power management in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,646 parts In-Stock

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Vyrian

USA . 969 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 360 parts In-Stock

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$0.163

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$0.157

360

$0.163

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$0.157

Northwest PG Solutions

USA . 641 parts In-Stock

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$0.179

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$0.158

641

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$0.158

TANS Electronics

Latvia . 6,547 parts In-Stock

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Problanco Electronics

Mexico . 3,978 parts In-Stock

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Kulean Microsystems

USA . 3,387 parts In-Stock

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SupplyDigital Components

Austria . 2,903 parts In-Stock

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Corphita

USA . 1,335 parts In-Stock

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UHIMA Technologies

Türkiye . 549 parts In-Stock

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Corohmni

South Africa . 418 parts In-Stock

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Overview

Experience the superior quality and performance of the 5HP01SP by Onsemi, a leading manufacturer in the semiconductor industry. This P-CHANNEL transistor offers enhanced power dissipation and operating temperature, making it perfect for a wide range of applications. From consumer electronics to automotive systems, this product delivers reliability and efficiency. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the 5HP01SP and unlock endless possibilities.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low power consumption and high efficiency, making them a good choice for applications requiring energy efficiency.

Configuration: SINGLE

The single configuration simplifies the design and implementation process, making it easier to integrate this transistor into circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and easy control of current flow, making them suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 0.07 A

The maximum drain current of 0.07 A allows for reliable and consistent performance under typical operating conditions.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels without overheating, ensuring reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor transistors offer high speed and low noise performance, making them ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150 °C allows for operation in a wide range of environments without compromising performance.

Maximum Drain Current (ID): 0.07 A

The maximum drain current of 0.07 A ensures reliable operation and prevents damage to the transistor under load.

Technical Specifications

Other Function Transistors 5HP01SP attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

5HP01SP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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