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5HP01S

Onsemi

5HP01S by Onsemi

The Onsemi 5HP01S is a P-CHANNEL transistor with single configuration and surface mount capability. It operates in enhancement mode with max drain current of 0.07A and power dissipation of 0.15W. Ideal for applications requiring metal-oxide semiconductor technology, it can withstand temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,269 parts In-Stock

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Digiode

USA . 1,646 parts In-Stock

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1,646

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Native Components

USA . 777 parts In-Stock

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$35.121

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$33.716

777

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$33.716

Northwest PG Solutions

USA . 1,251 parts In-Stock

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$38.633

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SupplyDigital Components

Austria . 6,046 parts In-Stock

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Problanco Electronics

Mexico . 4,479 parts In-Stock

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Kulean Microsystems

USA . 3,201 parts In-Stock

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Corphita

USA . 1,659 parts In-Stock

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Corohmni

South Africa . 136 parts In-Stock

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TANS Electronics

Latvia . 54 parts In-Stock

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UHIMA Technologies

Türkiye . 22 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the 5HP01S by Onsemi, a leading manufacturer in the industry. As a P-CHANNEL transistor with SINGLE configuration, this enhancement mode transistor offers exceptional performance and efficiency. Ideal for a wide range of applications, from power management to audio amplification, this surface mount transistor ensures seamless operation at a maximum operating temperature of 150 °C. Trust Onsemi to deliver cutting-edge technology and superior products that exceed expectations. Experience the value and benefits of the 5HP01S today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel transistors are known for their low on-state resistance and high input impedance, making them suitable for applications where low power consumption and high efficiency are important.

Configuration: SINGLE

Single configuration simplifies the circuit design and can help in reducing the overall size of the circuit, making it suitable for compact applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the product onto circuit boards, saving space and enabling automated manufacturing processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control over the transistor's switching characteristics and can lead to improved performance in various applications.

Maximum Drain Current (Abs) (ID): 0.07 A

With a maximum drain current of 0.07 A, this transistor can handle moderate current levels, suitable for low-power applications.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can dissipate heat effectively, ensuring reliable operation under varying conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers good performance in terms of speed, efficiency, and reliability, making it a preferred choice for various applications.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C allows this transistor to be used in high-temperature environments without compromising performance or reliability.

Maximum Drain Current (ID): 0.07 A

The maximum drain current rating of 0.07 A ensures that the transistor can handle current spikes or surges without getting damaged, enhancing its durability.

Technical Specifications

Other Function Transistors 5HP01S attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.07 A

Maximum Drain Current (ID):

.07 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

5HP01S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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