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2SC4837S-AY

Onsemi

2SC4837S-AY by Onsemi

2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 5,182 parts In-Stock

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Digiode

USA . 1,868 parts In-Stock

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Native Components

USA . 258 parts In-Stock

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$0.079

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$0.076

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Northwest PG Solutions

USA . 1,662 parts In-Stock

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$0.087

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$0.077

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AZTECH Wire

Italy . 89 parts In-Stock

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$15.190

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SupplyDigital Components

Austria . 7,534 parts In-Stock

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Kepictronics

USA . 6,786 parts In-Stock

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Kulean Microsystems

USA . 6,190 parts In-Stock

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Problanco Electronics

Mexico . 2,818 parts In-Stock

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UHIMA Technologies

Türkiye . 666 parts In-Stock

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Corphita

USA . 454 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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TANS Electronics

Latvia . 176 parts In-Stock

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Overview

Elevate your projects with the high-performance 2SC4837S-AY transistor from Onsemi. With a trusted reputation for quality and reliability, Onsemi delivers cutting-edge technology that meets the demands of various applications. Whether you're in need of amplification or signal processing, this NPN transistor offers superior power dissipation and collector current to ensure optimal performance. Experience the value and benefits of Onsemi's 2SC4837S-AY and take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle high power applications without overheating.

Minimum DC Current Gain (hFE): 140

A high DC current gain ensures that small input signals can control larger output signals effectively, improving overall performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate reliably in harsh environments or high temperature conditions.

Maximum Collector Current (IC): 4 A

With a high maximum collector current, this transistor can handle large currents, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The diverse terminal finish options provide flexibility for different circuit requirements and ensure reliable connections.

Technical Specifications

Other Function Transistors 2SC4837S-AY attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

2SC4837S-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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