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2SA1827S-AY

Onsemi

2SA1827S-AY by Onsemi

Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

Median Price

$0.810

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,000 parts In-Stock

1+ parts

$0.810

100+ parts

$0.790

1k+ parts

$0.780

10k+ parts

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1,000

$0.810

$0.790

$0.780

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Distributors (In-Stock)

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Digiode

USA . 1,281 parts In-Stock

1+ parts

$0.770

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1,281

$0.770

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Vyrian

USA . 13,293 parts In-Stock

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13,293

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Distributors (Availability)

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Corphita

USA . 1,169 parts In-Stock

1+ parts

$0.729

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-

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1,169

$0.729

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Corohmni

South Africa . 407 parts In-Stock

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$0.810

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407

$0.810

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AZTECH Wire

Italy . 279 parts In-Stock

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$12.300

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279

$12.300

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Problanco Electronics

Mexico . 6,047 parts In-Stock

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6,047

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SupplyDigital Components

Austria . 4,155 parts In-Stock

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Kulean Microsystems

USA . 1,686 parts In-Stock

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1,686

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TANS Electronics

Latvia . 1,555 parts In-Stock

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1,555

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Northwest PG Solutions

USA . 1,156 parts In-Stock

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1,156

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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889

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Native Components

USA . 778 parts In-Stock

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778

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Microchip USA

USA . 276 parts In-Stock

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276

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Overview

Unlock the power of reliable performance with the 2SA1827S-AY PNP transistor by Onsemi. Known for its superior quality and cutting-edge technology, Onsemi delivers innovative solutions for a wide range of applications. From amplifiers to power supplies, this transistor offers exceptional efficiency and durability, ensuring optimal performance in any project. Trust Onsemi to provide the value and reliability you need to succeed.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and can provide high current amplification.

Configuration: SINGLE

Single configuration transistors are easier to control and integrate into circuits, offering simplicity in design and operation.

Maximum Power Dissipation (Abs): 1.5 W

The high power dissipation allows the transistor to handle and dissipate heat efficiently, enabling it to operate at higher power levels without risk of damage.

Minimum DC Current Gain (hFE): 140

The high DC current gain ensures a stronger amplification of current, making the transistor suitable for applications requiring high signal amplification.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can withstand elevated temperatures, making it suitable for use in industrial and automotive applications where heat dissipation is crucial.

Maximum Collector Current (IC): 4 A

The high collector current rating allows the transistor to handle higher current loads, making it suitable for power applications that require high current output.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections and longevity of the transistor.

Technical Specifications

Other Function Transistors 2SA1827S-AY attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Configuration:

Minimum DC Current Gain (hFE):

140

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Trade Compliance

2SA1827S-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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