Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.Some examples of other function transistors include:1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.
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2SA1225-Y(Q)
Toshiba
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;
1.5 A
SINGLE
120
1
150 Cel
PNP
15 W
Other Transistors
YES
2SA2059(TE12L,F)
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 200;
3 A
200
2.5 W
2SA1312-BL(TE85L,F)
Toshiba's 2SA1312-BL(TE85L,F) is a PNP transistor with max power dissipation of 0.15W, min DC current gain of 350, and max collector current of 0.1A. Ideal for applications requiring single configuration surface mount transistors in temperatures up to 125°C.
.1 A
350
125 Cel
.15 W
2SA1721-R(TE85L,F)
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
30
50 MHz
2SA2154MFV-GR(TPL3)
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
.15 A
80 MHz
2SC5233-B(TE85L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .5 A;
.5 A
.5
NPN
.1 W
BFG25AW/X,115
NXP Semiconductors
BFG25AW/X,115 by NXP Semiconductors is a single NPN transistor ideal for high-frequency applications. It features a max power dissipation of 0.5 W, an hFE of 50, and operates up to 175 °C. This versatile component is perfect for RF amplification in compact designs.
.0065 A
50
175 Cel
.5 W
3500 MHz
BFG540W/XR,135
BFG540W/XR,135 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.5 W, a min DC current gain (hFE) of 100, and operates up to 175 °C. Perfect for surface mount designs in communication devices.
.12 A
100
BFR94A,215
BFR94A,215 by NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, a min DC current gain (hFE) of 65, and operates up to 150 °C. This versatile component is perfect for RF amplification tasks.
.025 A
65
260
.3 W
BFR94AW,115
BFR94AW,115 by NXP Semiconductors is an NPN transistor designed for high-frequency applications with a nominal transition frequency of 3.5 GHz. It supports a max power dissipation of 0.3 W and operates up to 150 °C. Ideal for surface mount configurations in RF circuits.
e3
TIN
BFP196R-E6327
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .15 A;
70
.7 W
5000 MHz
2SC3138-Y(TE85L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
.05 A
2SC3324-BL(TE85L,F)
Toshiba's 2SC3324-BL(TE85L,F) is an NPN transistor with a max power dissipation of 0.15W, hFE of 350, and IC of 0.1A. Ideal for applications requiring a single configuration in surface mount setups, it can operate at temperatures up to 125°C efficiently.
2SC6142(Q)
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.1 W; Maximum Collector Current (IC): 1.5 A; No. of Elements: 1;
1.1 W
NO
2SJ681(Q)
Toshiba's 2SJ681(Q) is a P-CHANNEL transistor with max drain current of 5A and power dissipation of 20W. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.
5 A
METAL-OXIDE SEMICONDUCTOR
ENHANCEMENT MODE
P-CHANNEL
20 W
TTC5200(Q)
Toshiba's TTC5200(Q) NPN transistor offers 150W power dissipation, 80 min hFE, and 15A collector current. Ideal for high-power applications in electronics due to its single configuration and max operating temp of 150°C.
15 A
80
150 W
TTC0002(Q)
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 18 A; Minimum DC Current Gain (hFE): 80;
18 A
180 W
MT3S20TU(TE85L)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): .08 A;
.08 A
.9 W
MT3S20P(TE12L,F)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .08 A;
.4 W
SSM3J114TU(TE85L)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (Abs) (ID): 1.8 A; Operating Mode: ENHANCEMENT MODE;
1.8 A
.8 W
SSM3J46CTB(TPL3)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Drain Current (ID): 2 A; Operating Mode: ENHANCEMENT MODE;
2 A
SSM6J409TU(TE85L,F)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain Current (ID): 9.5 A; No. of Elements: 1;
9.5 A
1 W
SSM6P35FE(TE85L,F)
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (Abs) (ID): .1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
2SC6026CT-Y(TPL3)
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;
60 MHz
PMN34UP,115
PMN34UP,115 by NXP Semiconductors is a P-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 5 A and power dissipation of 6.25 W, operating up to 150 °C. Ideal for surface mount configurations in various electronic circuits.
6.25 W
2SJ599(0)-Z-E1-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
20 A
35 W
2SJ599(0)-Z-E2-AZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 20 A;
2SJ690-T1B-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 2.5 A;
2.5 A
1.25 W
NE5820M53-T1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DEPLETION MODE
2SC4783-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
90
e6
.2 W
TIN BISMUTH
150 MHz
2SC4942-T1-AZ
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;
1 A
2 W
STX93003-AP
STMicroelectronics
STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.
16
1.5 W
Matte Tin (Sn)
SSM6L16FE(TE85L,F)
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .1 A; Maximum Drain Current (Abs) (ID): .1 A;
N-CHANNEL AND P-CHANNEL
SSM3J16CT(TPL3)
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
EC3A03B-TL-H
Onsemi
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
JUNCTION
N-CHANNEL
NDS9407-G
Fairchild Semiconductor
Fairchild Semiconductor's NDS9407-G is a P-CHANNEL FET with 3A max drain current and 2.5W power dissipation. Ideal for applications requiring single-channel enhancement mode transistors, it operates at up to 175°C, making it suitable for high-temperature environments.
MATTE TIN
BCP69-16/DG,115
NXP Semiconductors' BCP69-16/DG,115 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface-mount configurations up to 150°C operating temperature.
1.35 W
40 MHz
EC3A04B-3-TL-H
2SA1827S-AY
Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.
4 A
140
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4731S-AY
2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.
2SC4731T-AY
2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.
EC3H02BA-TL-H
EC3H02BA-TL-H by Onsemi is an NPN transistor with a single configuration, suitable for surface mount applications. It features a min DC current gain of 120 (hFE), max collector current of 0.07A (IC), and nominal transition frequency of 5000MHz (fT). Ideal for high-frequency circuit designs requiring low power dissipation up to 0.1W at temperatures up to 150 °C.
.07 A
FW907-TL-E
FW907-TL-E by Onsemi is a N/P-channel MOSFET with 10A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150 °C. Ideal for various electronic circuits requiring high current switching capabilities.
10 A
Tin/Bismuth (Sn/Bi)
PMR670UPE,115
PMR670UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 0.48 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.
.48 A
SSM6P16FE(TE85L,F)
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .1 A; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
AOWF4N60
Alpha & Omega Semiconductor
Other Transistors;
UPA1950TE-T1-AT
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 2.5 A;
1.15 W
MCH6331-TL-E
The Onsemi MCH6331-TL-E is a P-CHANNEL FET with 3.5A ID and 1.5W power dissipation in ENHANCEMENT MODE. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic circuits requiring high drain current capabilities.
3.5 A
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