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PMR670UPE,115

NXP Semiconductors

PMR670UPE,115 by NXP Semiconductors

PMR670UPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 0.48 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 162,000 parts In-Stock

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Vyrian

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Anansix

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Digiode

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AZTECH Wire

Italy . 85 parts In-Stock

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One Stop Electronics

USA . 1,144 parts In-Stock

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Component Stockers USA

USA . 398 parts In-Stock

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$99.990

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Kepictronics

USA . 10,350 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 7,580 parts In-Stock

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UNI Independent Distributors

Spain . 4,520 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unlock unmatched performance with the PMR670UPE,115 from NXP Semiconductors. Renowned for their commitment to innovation and quality, NXP delivers this P-channel enhancement mode transistor designed for versatility in various applications. With its robust construction and reliable operation at elevated temperatures, this surface-mount device ensures efficiency and durability, empowering your projects to achieve peak performance while reducing overall system costs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for easier integration in high-side switching applications, making it a versatile choice for various circuit designs.

Configuration: SINGLE

A single configuration simplifies the layout and design of circuits, reducing space requirements and complexity in installations.

Surface Mount: YES

Surface mount technology ensures a compact design and efficient use of PCB space, making it suitable for modern electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides a low on-resistance state, allowing for better efficiency and performance in applications that require precise control.

Maximum Drain Current (Abs) (ID): 0.48 A

With a maximum drain current of 0.48 A, this transistor can drive moderate loads, making it applicable in a variety of switching and amplifying applications.

Maximum Power Dissipation (Abs): 0.3 W

A power dissipation rating of 0.3 W allows for effective thermal management and reliability, ensuring the transistor can operate without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, enhancing circuit efficiency and making it ideal for battery-operated devices.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures that the transistor can function reliably in harsh environments and high-temperature applications.

Terminal Finish: TIN

The tin terminal finish offers good solderability and corrosion resistance, ensuring robust connections in various assembly processes.

Maximum Time At Peak Reflow Temperature (s): 30

Support for a maximum peak reflow temperature duration of 30 seconds ensures compatibility with standard soldering processes, facilitating easy integration into manufacturing workflows.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C indicates that this transistor can withstand high temperature soldering methods, contributing to great durability and reliability in assembled products.

Technical Specifications

Other Function Transistors PMR670UPE,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.48 A

Maximum Drain Current (ID):

.48 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMR670UPE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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