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BFR94AW,115

NXP Semiconductors

BFR94AW,115 by NXP Semiconductors

BFR94AW,115 by NXP Semiconductors is an NPN transistor designed for high-frequency applications with a nominal transition frequency of 3.5 GHz. It supports a max power dissipation of 0.3 W and operates up to 150 °C. Ideal for surface mount configurations in RF circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,715 parts In-Stock

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5,715

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Digiode

USA . 4,689 parts In-Stock

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4,689

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Anansix

USA . 2,509 parts In-Stock

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2,509

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NPI Materials, Inc.

USA . 5 parts In-Stock

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Native Components

USA . 645 parts In-Stock

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$0.235

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$0.226

645

$0.235

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$0.226

Northwest PG Solutions

USA . 2,248 parts In-Stock

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$0.259

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$0.228

2,248

$0.259

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$0.228

Advanced Electronics

New Zealand . 41 parts In-Stock

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$0.962

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$0.875

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$0.789

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41

$0.962

$0.875

$0.789

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AZTECH Wire

Italy . 278 parts In-Stock

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$9.330

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278

$9.330

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One Stop Electronics

USA . 812 parts In-Stock

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$27.050

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UNI Independent Distributors

Spain . 6,011 parts In-Stock

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Corphita

USA . 3,882 parts In-Stock

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Overview

Unlock unparalleled performance with the BFR94AW,115 from NXP Semiconductors, a leader in cutting-edge technology. This high-quality NPN transistor is perfect for diverse applications, delivering reliable power and efficiency under demanding conditions. With a robust design and exceptional current gain, it ensures your projects are backed by innovation and durability. Elevate your electronics with the trusted excellence of NXP and experience the perfect blend of value and reliability!

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching and amplification, making this transistor suitable for various applications where low noise and high speed are essential.

Configuration: SINGLE

A single configuration minimizes complexity and is ideal for compact designs, allowing for easier integration into circuits.

Surface Mount: YES

Surface mount technology (SMT) ensures efficient use of PCB space, enabling more compact designs with higher density assemblies.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor is capable of handling moderate power levels, making it suitable for various applications without overheating.

Minimum DC Current Gain (hFE): 65

A minimum current gain of 65 provides effective signal amplification, ensuring good performance in amplification tasks.

Maximum Operating Temperature: 150 °C

Operating at high temperatures up to 150 °C ensures reliability and stability in demanding environments.

Maximum Collector Current (IC): 0.025 A

With a maximum collector current of 0.025 A, this transistor can reliably handle a range of current applications, maintaining efficient performance.

Terminal Finish: TIN

TIN terminal finish provides good solderability and improves the reliability of the electrical connections in various environments.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures efficient soldering without damaging the component, making it compatible with standard manufacturing processes.

Peak Reflow Temperature (°C): 260

The capability of withstanding peak temperatures of up to 260 °C during soldering processes enhances the thermal stability and reliability of the component.

Nominal Transition Frequency (fT): 3500 MHz

A high transition frequency of 3500 MHz allows for fast switching capabilities, making this transistor suitable for high-frequency applications.

Technical Specifications

Other Function Transistors BFR94AW,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

65

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

BFR94AW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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