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BCP69-16/DG,115

NXP Semiconductors

BCP69-16/DG,115 by NXP Semiconductors

NXP Semiconductors' BCP69-16/DG,115 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface-mount configurations up to 150°C operating temperature.

Median Price

$0.223

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 320,000 parts In-Stock

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$0.232

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$0.192

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$0.172

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Verical

USA . 311,000 parts In-Stock

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$0.214

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Nova Conductors

Japan . 25 parts In-Stock

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$0.087

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$0.087

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Digiode

USA . 4,897 parts In-Stock

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$0.093

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DigiKey Marketplace

USA . 320,000 parts In-Stock

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Vyrian

USA . 6,536 parts In-Stock

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Anansix

USA . 2,022 parts In-Stock

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VNN

France . 727 parts In-Stock

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Ampacity Inc.

Singapore . 315,149 parts In-Stock

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$0.083

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$0.083

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Netroflash

USA . 2,000 parts In-Stock

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$0.087

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$0.085

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$0.087

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Corphita

USA . 3,189 parts In-Stock

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$0.088

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AZTECH Wire

Italy . 168 parts In-Stock

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$13.000

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Continental Prestige Electronics

USA . 320,000 parts In-Stock

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$0.117

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QUARKTWIN TECHNOLOGY LTD

USA . 9,189 parts In-Stock

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Microchip USA

USA . 6,918 parts In-Stock

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UNI Independent Distributors

Spain . 1,030 parts In-Stock

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Overview

Enhance your electronic projects with the BCP69-16/DG,115 by NXP Semiconductors. As a leading manufacturer in the industry, NXP guarantees top-notch quality and reliability. This PNP transistor offers seamless integration thanks to its surface mount capability, making it perfect for a wide range of applications. With a maximum power dissipation of 1.35W and a high DC current gain of 100, this transistor ensures optimal performance. Upgrade your designs today with the BCP69-16/DG,115 and experience unparalleled value and efficiency like never before.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications, making this product suitable for fast switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces the chances of errors in implementation.

Surface Mount: YES

Surface mount capability allows for easy integration into compact circuit boards, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 1.35 W

The high maximum power dissipation ensures that the transistor can handle moderate power levels without overheating, making it reliable for long-term use.

Minimum DC Current Gain (hFE): 100

The high DC current gain ensures that the transistor can effectively amplify small input signals, improving the overall performance of the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 2 A

The high maximum collector current allows the transistor to handle higher current loads, making it versatile for various circuit designs.

Nominal Transition Frequency (fT): 40 MHz

The high transition frequency indicates the speed at which the transistor can switch on and off, making it ideal for high-frequency applications.

Technical Specifications

Other Function Transistors BCP69-16/DG,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BCP69-16/DG,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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