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BCP69-16/IN,135

NXP Semiconductors

BCP69-16/IN,135 by NXP Semiconductors

NXP Semiconductors' BCP69-16/IN,135 is a PNP transistor with max. power dissipation of 1.35W and max. collector current of 2A. With min. DC current gain of 100 and fT of 40MHz, it's ideal for high-frequency applications in surface mount configurations at up to 150°C operating temperature.

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Vyrian

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Digiode

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Nova Conductors

Japan . 750 parts In-Stock

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AZTECH Wire

Italy . 192 parts In-Stock

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Ampacity Inc.

Singapore . 1,564 parts In-Stock

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One Stop Electronics

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Overview

Unleash the power of innovation with the BCP69-16/IN,135 by NXP Semiconductors. As a leading manufacturer in the industry, NXP guarantees top-notch quality and reliability. This PNP transistor is a game-changer in the world of electronics, offering unmatched performance and efficiency. From amplifiers to power supplies, this versatile component is perfect for a wide range of applications. Upgrade your projects today with the BCP69-16/IN,135 and experience the difference!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and are ideal for applications where the output signal is in phase with the input signal.

Configuration: SINGLE

Single configuration transistors are simpler to use and require less complex circuitry, making them a good choice for basic electronics projects.

Surface Mount: YES

Surface mount transistors are compact and suitable for high-density PCB designs, enabling space-efficient electronic assemblies.

Maximum Power Dissipation (Abs): 1.35 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain indicates good amplification capabilities, allowing this transistor to efficiently boost weak signals in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, making it suitable for industrial applications.

Maximum Collector Current (IC): 2 A

The high maximum collector current rating allows this transistor to handle substantial current flow, making it suitable for power amplification applications.

Nominal Transition Frequency (fT): 40 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, enabling it to be used in radio frequency (RF) and high-speed signal processing circuits.

Technical Specifications

Other Function Transistors BCP69-16/IN,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BCP69-16/IN,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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