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BCP68/DG/B2,115

NXP Semiconductors

BCP68/DG/B2,115 by NXP Semiconductors

BCP68/DG/B2,115 from NXP Semiconductors is an NPN single transistor ideal for surface mount applications. It features a max power dissipation of 1.35W, a collector current of 2A, and operates up to 150 °C. This versatile component is perfect for amplifying signals in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 170,000 parts In-Stock

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170,000

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LIBRA Elektronik GmbH

Germany . 3,039 parts In-Stock

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3,039

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Digiode

USA . 1,642 parts In-Stock

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1,642

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Anansix

USA . 1,472 parts In-Stock

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1,472

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Vyrian

USA . 36 parts In-Stock

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36

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Distributors (Availability)

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Native Components

USA . 836 parts In-Stock

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$1.650

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836

$1.650

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Northwest PG Solutions

USA . 1,977 parts In-Stock

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$1.815

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1,977

$1.815

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One Stop Electronics

USA . 894 parts In-Stock

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$60.050

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894

$60.050

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UNI Independent Distributors

Spain . 4,914 parts In-Stock

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Corphita

USA . 2,176 parts In-Stock

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Overview

Elevate your designs with the BCP68/DG/B2,115 from NXP Semiconductors—where quality meets innovation. This NPN transistor is perfect for diverse applications, delivering robust performance while ensuring reliability even in demanding environments. With NXP's trusted legacy in semiconductor technology, you benefit from superior efficiency, seamless integration, and enhanced durability. Choose the BCP68 to power your next project with confidence!

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration is ideal for a wide range of applications, offering excellent switching characteristics and easy integration into standard designs.

Configuration: SINGLE

The single configuration simplifies PCB layout and reduces space requirements, making it suitable for compact electronic designs.

Surface Mount: YES

Surface mount capability allows for automated assembly and improved performance in high-frequency applications, making the product suitable for modern electronic manufacturing.

Maximum Power Dissipation (Abs): 1.35 W

A maximum power dissipation of 1.35 W indicates that the transistor can handle significant loads, making it reliable for various high-power applications.

Minimum DC Current Gain (hFE): 85

A high minimum DC current gain ensures efficient current amplification, ideal for applications requiring strong signal performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this product is suitable for demanding environments, ensuring durability and reliability.

Maximum Collector Current (IC): 2 A

The ability to handle up to 2 A of collector current makes this transistor a robust choice for power applications, allowing it to drive significant loads.

Nominal Transition Frequency (fT): 40 MHz

A transition frequency of 40 MHz enhances the speed at which the transistor can operate, making it suitable for high-frequency applications.

Technical Specifications

Other Function Transistors BCP68/DG/B2,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

2 A

Configuration:

Minimum DC Current Gain (hFE):

85

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BCP68/DG/B2,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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