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PMN34UP,115

NXP Semiconductors

PMN34UP,115 by NXP Semiconductors

PMN34UP,115 by NXP Semiconductors is a P-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 5 A and power dissipation of 6.25 W, operating up to 150 °C. Ideal for surface mount configurations in various electronic circuits.

Median Price

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Lifecycle Status

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4

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1k+

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Chip Stock

USA . 128,000 parts In-Stock

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Vyrian

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Digiode

USA . 4,399 parts In-Stock

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Anansix

USA . 996 parts In-Stock

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AZTECH Wire

Italy . 448 parts In-Stock

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$18.890

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One Stop Electronics

USA . 1,396 parts In-Stock

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$48.050

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QUARKTWIN TECHNOLOGY LTD

USA . 9,394 parts In-Stock

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UNI Independent Distributors

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Corphita

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A-Z Elektronik GmbH

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Overview

Elevate your projects with the PMN34UP,115 from NXP Semiconductors, a leader in quality and innovation. This P-channel enhancement mode transistor combines superior performance with reliability, perfect for various applications like power management and signal processing. Designed for seamless integration, it delivers impressive durability and efficiency, ensuring your designs stand out while saving time and cost. Trust NXP for excellence—your projects deserve nothing less!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for high-side switching applications, allowing for effective control of load voltage.

Configuration: SINGLE

Single configuration provides simplicity in design, making it easier to integrate into compact circuits.

Surface Mount: YES

Surface mount technology facilitates efficient assembly on PCBs, saving space and reducing manufacturing costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows for low power consumption during idle states, enhancing overall circuit efficiency.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current rating of 5 A, this transistor can handle substantial loads, suitable for various applications.

Maximum Power Dissipation (Abs): 6.25 W

A high power dissipation capability ensures reliable operation in demanding applications without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides higher efficiency and faster switching speeds, making this transistor ideal for modern electronic applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows for use in high-temperature environments, ensuring reliability under harsh conditions.

Terminal Finish: TIN

Tin finishes offer good corrosion resistance and are compatible with lead-free soldering, aligning with current environmental standards.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand 30 seconds at peak reflow temperature ensures compatibility with standard PCB assembly processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures this transistor can endure intensive soldering processes without damage.

Technical Specifications

Other Function Transistors PMN34UP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMN34UP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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