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NDS9407-G

Fairchild Semiconductor

NDS9407-G by Fairchild Semiconductor

Fairchild Semiconductor's NDS9407-G is a P-CHANNEL FET with 3A max drain current and 2.5W power dissipation. Ideal for applications requiring single-channel enhancement mode transistors, it operates at up to 175°C, making it suitable for high-temperature environments.

Median Price

$1.000

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Nova Conductors

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Vyrian

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Aztec Data Supply Inc.

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Continental Prestige Electronics

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Argo Parts USA

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Semicontronic

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AZTECH Wire

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Overview

Unlock the potential of your electronic devices with the NDS9407-G by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor delivers top-quality P-CHANNEL transistors that offer enhanced performance and reliability. Whether you're looking to optimize power management, improve signal processing, or enhance circuit efficiency, this single configuration transistor is the perfect solution. With a maximum drain current of 3A and a maximum power dissipation of 2.5W, the NDS9407-G provides exceptional value and benefits to customers seeking cutting-edge technology for their applications. Experience the difference with Fairchild Semiconductor today.

Feature Benefit Bullets

Polarity or Channel Type:

P-CHANNEL - This feature allows for efficient control of current flow in the circuit, making it a reliable choice for various applications.

Configuration:

SINGLE - The single configuration simplifies design and installation processes, making it user-friendly and cost-effective.

Surface Mount:

YES - The surface mount capability offers space-saving benefits and increased efficiency in circuit board assembly.

Operating Mode:

ENHANCEMENT MODE - The enhancement mode operation enhances performance and allows for better control over the transistor's characteristics.

No. of Elements:

1 - The single element design simplifies circuit layouts and reduces the risk of component failure, ensuring reliability.

Maximum Drain Current (Abs) (ID):

3 A - With a high maximum drain current, this transistor can handle heavy loads, making it suitable for power applications.

Maximum Power Dissipation (Abs):

2.5 W - The high power dissipation rating ensures the transistor can operate efficiently without overheating.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - This advanced technology provides improved performance and reliability compared to traditional transistor technologies.

Maximum Operating Temperature:

175 °C - The high operating temperature allows for use in a wide range of environments, increasing versatility.

Terminal Finish:

MATTE TIN - The matte tin finish offers excellent solderability and corrosion resistance, ensuring long-term reliability.

Moisture Sensitivity Level (MSL):

1 - With a low moisture sensitivity level, this transistor can withstand humid environments without degradation.

Maximum Time At Peak Reflow Temperature (s):

30 - The short reflow time minimizes thermal stress on the component during assembly, extending its lifespan.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature tolerance ensures the transistor can withstand soldering processes without damage.

Technical Specifications

Other Function Transistors NDS9407-G attributes and parameters. Explore more Other Function Transistors devices from Fairchild Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NDS9407-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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