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UPA1950TE-T1-AT

Renesas Electronics

UPA1950TE-T1-AT by Renesas Electronics

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 2.5 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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Vyrian

USA . 923 parts In-Stock

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923

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Distributors (Availability)

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AZTECH Wire

Italy . 83 parts In-Stock

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$21.230

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83

$21.230

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A-Z Elektronik GmbH

Germany . 9,002 parts In-Stock

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100+ parts

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9,002

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Technical Specifications

Other Function Transistors UPA1950TE-T1-AT attributes and parameters. Explore more Other Function Transistors devices from Renesas Electronics

Specs

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Trade Compliance

UPA1950TE-T1-AT Transistors trade compliance attributes, and parameters.

ECCN

5A002

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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