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BFG25AW/X,115

NXP Semiconductors

BFG25AW/X,115 by NXP Semiconductors

BFG25AW/X,115 by NXP Semiconductors is a single NPN transistor ideal for high-frequency applications. It features a max power dissipation of 0.5 W, an hFE of 50, and operates up to 175 °C. This versatile component is perfect for RF amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 154,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,000 parts In-Stock

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6,000

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Digiode

USA . 4,147 parts In-Stock

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Vyrian

USA . 2,703 parts In-Stock

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Anansix

USA . 2,503 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 709 parts In-Stock

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$16.530

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709

$16.530

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One Stop Electronics

USA . 1,541 parts In-Stock

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$37.050

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1,541

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QUARKTWIN TECHNOLOGY LTD

USA . 19,660 parts In-Stock

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19,660

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Microchip USA

USA . 5,882 parts In-Stock

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Corphita

USA . 3,354 parts In-Stock

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UNI Independent Distributors

Spain . 2,885 parts In-Stock

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Northwest PG Solutions

USA . 741 parts In-Stock

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Native Components

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Overview

Unlock unparalleled performance with the BFG25AW/X,115 from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers a robust NPN transistor ideal for a variety of applications, including RF amplification and signal processing. With exceptional power handling and superior thermal stability, this surface-mount solution empowers your designs, ensuring reliability and efficiency. Choose NXP for cutting-edge technology that drives your success!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in various applications due to their fast switching speeds and versatility, making this product a reliable choice for developers.

Configuration: SINGLE

Single configuration ensures simplicity in circuit design and integration, suitable for both basic and complex applications.

Surface Mount: YES

Surface mount capability allows for compact designs and is ideal for automated PCB assembly, enhancing manufacturing efficiency.

Maximum Power Dissipation (Abs): 0.5 W

A maximum power dissipation of 0.5 W makes this transistor suitable for low-power applications, providing reliability without overheating.

Minimum DC Current Gain (hFE): 50

With a minimum hFE of 50, this transistor ensures sufficient amplification for various analog applications, improving performance in signal processing.

Maximum Operating Temperature: 175 °C

A high maximum operating temperature of 175 °C ensures reliable performance in demanding environments and reduces the risk of component failure.

Maximum Collector Current (IC): 0.0065 A

Support for a maximum collector current of 0.0065 A makes this transistor suitable for small signal applications where high current is not required.

Nominal Transition Frequency (fT): 3500 MHz

With a nominal transition frequency of 3500 MHz, this transistor is ideal for high-frequency applications, delivering excellent performance in RF circuits.

Technical Specifications

Other Function Transistors BFG25AW/X,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

50

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BFG25AW/X,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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