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BFG25AW

Philips Semiconductors

BFG25AW by Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .0065 A; JESD-609 Code: e3;

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3

In-Stock Inventory

1k+

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Digiode

USA . 2,836 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 1,399 parts In-Stock

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UNI Independent Distributors

Spain . 4,813 parts In-Stock

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Corphita

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Alle Elektronik GmbH

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Native Components

USA . 885 parts In-Stock

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Northwest PG Solutions

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Technical Specifications

Other Function Transistors BFG25AW attributes and parameters. Explore more Other Function Transistors devices from Philips Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

BFG25AW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Philips Semiconductors

In September 2006, Philips completed the sale of an 80.1% stake in Philips Semiconductors to a consortium of private equity investors consisting of KKR, Bain Capital, Silver Lake Partners, Apax Partners and AlpInvest Partners. The new company name NXP (from Next eXPerience) was announced on August 31, 2006, and the company was officially launched during the Internationale Funkausstellung (IFA) consumer electronics show in Berlin. The newly independent NXP was ranked as one of the world's top 10 semiconductor companies

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