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2SJ681(Q)

Toshiba

2SJ681(Q) by Toshiba

Toshiba's 2SJ681(Q) is a P-CHANNEL transistor with max drain current of 5A and power dissipation of 20W. Ideal for applications requiring enhancement mode operation, such as in METAL-OXIDE SEMICONDUCTOR technology at up to 150°C operating temperature.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 3,157 parts In-Stock

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Nova Conductors

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.691

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$0.629

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$0.567

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AZTECH Wire

Italy . 321 parts In-Stock

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$12.810

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Ampacity Inc.

Singapore . 467 parts In-Stock

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$34.050

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GreenTree Electronics

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Discover the power of the 2SJ681(Q) by Toshiba, a high-quality P-CHANNEL transistor that offers exceptional performance and reliability. Manufactured by Toshiba, a trusted name in the industry, this transistor is perfect for a variety of applications. From enhancing electronic devices to improving circuit efficiency, the 2SJ681(Q) delivers unparalleled value and benefits to customers looking for top-notch components. Experience the difference with Toshiba's cutting-edge technology and take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type : P-CHANNEL

P-Channel transistors are suitable for low-side switching applications, making this product ideal for certain circuit configurations.

Configuration : SINGLE

Single configuration transistors are simpler to use and integrate into circuit designs, making this product user-friendly.

Operating Mode : ENHANCEMENT MODE

Enhancement mode transistors offer ease of use and control in circuit designs, enhancing the overall performance of the product.

Maximum Drain Current (Abs) (ID) : 5 A

With a high maximum drain current capacity of 5A, this transistor can handle higher power requirements, making it suitable for a variety of applications.

Maximum Power Dissipation (Abs) : 20 W

The high maximum power dissipation rating of 20W ensures that this transistor can handle high power levels without overheating, providing reliability in operation.

Field Effect Transistor Technology : METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high performance and efficiency in transistors, making this product a reliable choice for various applications.

Maximum Operating Temperature : 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring stable performance in challenging environments.

Technical Specifications

Other Function Transistors 2SJ681(Q) attributes and parameters. Explore more Other Function Transistors devices from Toshiba

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ681(Q) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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