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2SJ645(TP)

Onsemi

2SJ645(TP) by Onsemi

The Onsemi 2SJ645(TP) is a P-CHANNEL transistor with a max drain current of 8A and power dissipation of 20W. It operates in enhancement mode with a max temp of 150 °C. Ideal for applications requiring high current handling and power dissipation in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,334 parts In-Stock

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1,334

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Digiode

USA . 322 parts In-Stock

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322

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 548 parts In-Stock

1+ parts

$283.920

100+ parts

$278.242

1k+ parts

$275.402

10k+ parts

$272.563

548

$283.920

$278.242

$275.402

$272.563

Northwest PG Solutions

USA . 1,926 parts In-Stock

1+ parts

$312.312

100+ parts

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1,926

$312.312

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TANS Electronics

Latvia . 7,404 parts In-Stock

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7,404

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Kulean Microsystems

USA . 5,725 parts In-Stock

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5,725

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SupplyDigital Components

Austria . 2,410 parts In-Stock

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2,410

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Corphita

USA . 1,908 parts In-Stock

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1,908

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Problanco Electronics

Mexico . 696 parts In-Stock

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696

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UHIMA Technologies

Türkiye . 427 parts In-Stock

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427

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Corohmni

South Africa . 424 parts In-Stock

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Overview

Unleash the power of innovation with the 2SJ645(TP) by Onsemi. Crafted with precision and expertise, this P-CHANNEL transistor offers unparalleled performance and reliability in a variety of applications. Whether you're looking to enhance your electronic devices or optimize your power management systems, this product is guaranteed to deliver unmatched value, efficiency, and quality. Trust in Onsemi's reputation for excellence and elevate your projects to new heights with the 2SJ645(TP).

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high input impedance and low output impedance, making them suitable for applications where low power consumption and fast switching speeds are required.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor's conductivity, making it user-friendly for applications requiring precise voltage regulation.

Maximum Drain Current (Abs) (ID): 8 A

With a high maximum drain current, this transistor can handle high power loads efficiently, making it suitable for applications that require a higher output current.

Maximum Power Dissipation (Abs): 20 W

The high power dissipation capability allows the transistor to handle large amounts of power without overheating, making it reliable for demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and stability, ensuring reliable performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications in harsh environments or with high temperature requirements.

Technical Specifications

Other Function Transistors 2SJ645(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ645(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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