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2SJ635(TP)

Onsemi

2SJ635(TP) by Onsemi

The Onsemi 2SJ635(TP) is a P-CHANNEL MOSFET with a max drain current of 12A and power dissipation of 30W. It operates in enhancement mode at up to 150 °C, suitable for power management applications requiring high current handling and efficient heat dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,487 parts In-Stock

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2,487

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Vyrian

USA . 2,218 parts In-Stock

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2,218

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Distributors (Availability)

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Native Components

USA . 221 parts In-Stock

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$1.036

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221

$1.036

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Northwest PG Solutions

USA . 618 parts In-Stock

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$1.140

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618

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Kulean Microsystems

USA . 7,684 parts In-Stock

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7,684

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Problanco Electronics

Mexico . 3,582 parts In-Stock

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TANS Electronics

Latvia . 3,443 parts In-Stock

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SupplyDigital Components

Austria . 1,303 parts In-Stock

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UHIMA Technologies

Türkiye . 907 parts In-Stock

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Corohmni

South Africa . 490 parts In-Stock

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Corphita

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Overview

Discover the unparalleled quality and reliability of the 2SJ635(TP) P-CHANNEL enhancement mode transistor by Onsemi. Designed for a wide range of applications, this single configuration transistor offers customers exceptional value and benefits. With a maximum drain current of 12A and a power dissipation of 30W, this METAL-OXIDE SEMICONDUCTOR technology ensures optimal performance even in demanding conditions. Trust Onsemi for top-notch products that deliver superior results every time.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for applications requiring low side switching, making this product suitable for various power management tasks.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, reducing complexity and enhancing reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor's conductivity, providing efficient performance in different applications.

Maximum Drain Current (Abs) (ID): 12 A

With a high maximum drain current, this transistor can handle demanding loads and deliver robust performance in power circuits.

Maximum Power Dissipation (Abs): 30 W

The high power dissipation capability ensures the transistor can operate reliably under heavy load conditions without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low input impedance and high efficiency, making this transistor suitable for power switching applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, ensuring stability and longevity in harsh environments.

Technical Specifications

Other Function Transistors 2SJ635(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ635(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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