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2SJ646(TP-FA)

Onsemi

2SJ646(TP-FA) by Onsemi

The Onsemi 2SJ646(TP-FA) is a P-CHANNEL transistor with a max drain current of 8A and power dissipation of 15W. It operates in enhancement mode, suitable for applications requiring high-power handling such as power supplies or motor control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,323 parts In-Stock

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2,323

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Vyrian

USA . 1,110 parts In-Stock

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1,110

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 539 parts In-Stock

1+ parts

$276.464

100+ parts

$270.935

1k+ parts

$268.170

10k+ parts

$265.405

539

$276.464

$270.935

$268.170

$265.405

Northwest PG Solutions

USA . 673 parts In-Stock

1+ parts

$304.110

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673

$304.110

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Problanco Electronics

Mexico . 8,257 parts In-Stock

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8,257

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SupplyDigital Components

Austria . 6,323 parts In-Stock

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6,323

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TANS Electronics

Latvia . 5,129 parts In-Stock

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5,129

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Kulean Microsystems

USA . 4,988 parts In-Stock

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4,988

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Corphita

USA . 1,813 parts In-Stock

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1,813

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UHIMA Technologies

Türkiye . 315 parts In-Stock

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315

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Corohmni

South Africa . 281 parts In-Stock

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Overview

Looking for a high-quality P-Channel transistor that delivers exceptional performance? Look no further than the 2SJ646(TP-FA) by Onsemi. With its single configuration and enhancement mode operation, this surface mount transistor is perfect for a wide range of applications. Whether you're designing power supplies, motor controls, or audio amplifiers, this transistor offers reliability and efficiency. Trust Onsemi's reputation for excellence and choose the 2SJ646(TP-FA) for your next project. Unlock new possibilities with this versatile and powerful transistor.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors offer better efficiency and lower conduction losses compared to N-CHANNEL transistors, making this product a good choice for applications where power efficiency is important.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, leading to a more compact and cost-effective solution.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs, saving space and enabling automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to use and control in comparison to depletion mode transistors, offering greater flexibility in circuit design.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring reliability in demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance, low leakage current, and high efficiency, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in elevated temperature environments, making this product ideal for industrial and automotive applications.

Maximum Drain Current (ID): 8 A

With a maximum drain current of 8 A, this transistor can handle high current loads, making it suitable for power electronics applications requiring high current capabilities.

Technical Specifications

Other Function Transistors 2SJ646(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ646(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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