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2SJ630

Onsemi

2SJ630 by Onsemi

The Onsemi 2SJ630 is a P-CHANNEL transistor with a max drain current of 6A and power dissipation of 3.5W in enhancement mode. Ideal for surface mount applications, it operates at temperatures up to 150 °C. Suitable for various electronic circuits requiring high-power switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 598 parts In-Stock

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Vyrian

USA . 201 parts In-Stock

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Native Components

USA . 109 parts In-Stock

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$0.103

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$0.099

109

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$0.099

Northwest PG Solutions

USA . 778 parts In-Stock

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$0.113

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Kepictronics

USA . 27,860 parts In-Stock

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Problanco Electronics

Mexico . 6,246 parts In-Stock

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Kulean Microsystems

USA . 4,812 parts In-Stock

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TANS Electronics

Latvia . 3,089 parts In-Stock

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3,089

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SupplyDigital Components

Austria . 1,473 parts In-Stock

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Corphita

USA . 437 parts In-Stock

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Corohmni

South Africa . 349 parts In-Stock

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UHIMA Technologies

Türkiye . 258 parts In-Stock

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Overview

Elevate your electronics projects with the 2SJ630 from Onsemi. As a leading manufacturer in the semiconductor industry, Onsemi guarantees top-notch quality and reliability. This P-CHANNEL transistor offers enhanced performance and efficiency for a variety of applications. Whether you're working on amplifiers, power supplies, or motor control circuits, the 2SJ630 delivers exceptional value, benefits, and advantages to meet your needs. Upgrade your designs with this powerful single configuration transistor today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel transistors are known for their low on-state resistance and high current conduction capabilities, making them efficient for power management applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple circuit designs, making them a cost-effective choice for various applications.

Surface Mount: YES

Surface mount transistors are compact in size and can be easily integrated onto PCBs, saving space and allowing for higher component density in electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer improved control over the flow of current, providing better efficiency and performance in various electronic circuits.

Maximum Drain Current (Abs): 6 A

With a high maximum drain current rating of 6A, this transistor can handle heavy loads and deliver superior performance in power applications.

Maximum Power Dissipation (Abs): 3.5 W

The high power dissipation capability of 3.5W ensures the transistor can handle heavy power loads without overheating, enhancing its overall reliability and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor transistors are known for their low noise, high gain, and high input impedance, making them ideal for use in amplification and signal processing circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments and maintain stable performance under harsh conditions.

Technical Specifications

Other Function Transistors 2SJ630 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ630 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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