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2SJ636(TP-FA)

Onsemi

2SJ636(TP-FA) by Onsemi

The Onsemi 2SJ636(TP-FA) is a P-CHANNEL transistor with a max drain current of 3A and power dissipation of 15W. It operates in enhancement mode with METAL-OXIDE SEMICONDUCTOR technology, suitable for applications requiring high power and temperature resistance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 616 parts In-Stock

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616

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Vyrian

USA . 302 parts In-Stock

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302

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Native Components

USA . 457 parts In-Stock

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$34.500

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$33.120

457

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$33.120

Northwest PG Solutions

USA . 377 parts In-Stock

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$37.950

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377

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TANS Electronics

Latvia . 6,659 parts In-Stock

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6,659

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SupplyDigital Components

Austria . 5,419 parts In-Stock

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Kulean Microsystems

USA . 3,670 parts In-Stock

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3,670

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Corphita

USA . 1,897 parts In-Stock

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Problanco Electronics

Mexico . 1,592 parts In-Stock

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UHIMA Technologies

Türkiye . 163 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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Overview

Discover the power of the 2SJ636(TP-FA) P-CHANNEL transistor by Onsemi - a reliable and high-quality component that is perfect for a variety of applications. Whether you're looking to enhance your electronics projects or upgrade your industrial systems, this transistor offers unmatched performance and durability. With its single configuration and surface mount capability, it's easy to integrate into any design. Trust in Onsemi's expertise in semiconductor technology and unlock the potential of your projects with the 2SJ636(TP-FA) transistor.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-resistance and high current carrying capability, making them suitable for power management applications.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits compared to multiple configurations, simplifying the design process.

Surface Mount: YES

Surface mount transistors are more compact and allow for denser PCB designs, saving space and improving overall system efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors can easily be turned on or off using a gate signal, providing precise control and efficient power management.

Maximum Drain Current (Abs) (ID): 3 A

A high maximum drain current rating of 3 A allows this transistor to handle demanding applications with ease, ensuring reliable performance under heavy loads.

Maximum Power Dissipation (Abs): 15 W

With a maximum power dissipation of 15 W, this transistor can dissipate heat effectively, preventing overheating and ensuring long-term reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching speeds, making this transistor suitable for high-performance applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperature environments, ensuring reliable operation even in harsh conditions.

Technical Specifications

Other Function Transistors 2SJ636(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ636(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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