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2SJ643FA

Onsemi

2SJ643FA by Onsemi

The Onsemi 2SJ643FA is a P-CHANNEL FET with 6A max drain current and 10W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling in surface-mount configurations at up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 627 parts In-Stock

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627

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Digiode

USA . 366 parts In-Stock

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366

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Distributors (Availability)

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Native Components

USA . 685 parts In-Stock

1+ parts

$5.760

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685

$5.760

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Kulean Microsystems

USA . 5,820 parts In-Stock

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5,820

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SupplyDigital Components

Austria . 4,375 parts In-Stock

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4,375

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Problanco Electronics

Mexico . 2,801 parts In-Stock

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2,801

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TANS Electronics

Latvia . 2,014 parts In-Stock

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2,014

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Northwest PG Solutions

USA . 1,598 parts In-Stock

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$5.645

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1,598

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$5.645

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Corphita

USA . 1,279 parts In-Stock

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1,279

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UHIMA Technologies

Türkiye . 694 parts In-Stock

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Corohmni

South Africa . 447 parts In-Stock

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Overview

Unleash the power of innovation with the 2SJ643FA by Onsemi! As a top-quality P-channel transistor, this product is designed to deliver reliable performance and efficiency in a variety of applications. Manufactured by Onsemi, a leading name in the industry, you can trust that this transistor meets the highest standards of quality and durability. Whether you're working on automotive electronics, industrial control systems, or power management solutions, the 2SJ643FA offers unparalleled value, benefits, and advantages to help you achieve your goals seamlessly. Elevate your projects with the superior performance of the 2SJ643FA by Onsemi today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

This P-channel transistor allows for efficient control of power in electronic circuits, making it suitable for various applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation process, making it easier to integrate into circuit boards.

Surface Mount: YES

Surface mount capability makes it easier to mount and solder onto circuit boards, saving space and reducing assembly time.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for enhanced control and performance in electronic circuits, leading to improved efficiency.

Maximum Drain Current (ID): 6 A

The high maximum drain current allows for the handling of higher power levels, making it suitable for more demanding applications.

Maximum Power Dissipation: 10 W

With a maximum power dissipation of 10 watts, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers improved performance and efficiency compared to other transistor technologies, making it a reliable choice for electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for a wide range of environments and applications.

Technical Specifications

Other Function Transistors 2SJ643FA attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ643FA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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