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2SJ636(TP)

Onsemi

2SJ636(TP) by Onsemi

The Onsemi 2SJ636(TP) is a P-CHANNEL MOSFET with 3A max drain current and 15W power dissipation. Ideal for enhancement mode applications, it operates at up to 150 °C. Suitable for various electronic circuits requiring high power handling capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,310 parts In-Stock

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2,310

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Vyrian

USA . 229 parts In-Stock

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229

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Northwest PG Solutions

USA . 1,530 parts In-Stock

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$2.782

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1,530

$2.782

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Problanco Electronics

Mexico . 7,140 parts In-Stock

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7,140

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SupplyDigital Components

Austria . 6,788 parts In-Stock

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6,788

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Kulean Microsystems

USA . 5,172 parts In-Stock

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5,172

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TANS Electronics

Latvia . 1,118 parts In-Stock

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Corohmni

South Africa . 466 parts In-Stock

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466

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Native Components

USA . 369 parts In-Stock

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$2.453

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369

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Corphita

USA . 149 parts In-Stock

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Overview

Discover the power of the 2SJ636(TP) P-CHANNEL transistor by Onsemi, a leading manufacturer known for their top-quality products. Ideal for a variety of applications, this enhancement mode transistor offers customers exceptional value and benefits. With a maximum drain current of 3A and a maximum power dissipation of 15W, this METAL-OXIDE SEMICONDUCTOR technology device ensures reliable performance even in high-temperature environments. Upgrade your electronic projects with the superior capabilities of the 2SJ636(TP) and experience unmatched efficiency and precision.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high efficiency and low power consumption, making them ideal for applications requiring energy efficiency.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require less power to operate, leading to improved performance and reduced heat generation.

Maximum Drain Current (Abs): 3 A

With a high maximum drain current, this transistor can handle high power loads effectively, making it suitable for various applications.

Maximum Power Dissipation (Abs): 15 W

The high power dissipation capability ensures that the transistor can handle high-power applications without risk of overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers reliable performance and stability, making this transistor a dependable choice for critical applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring durability and reliability.

Technical Specifications

Other Function Transistors 2SJ636(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ636(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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