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2SJ646(TP)

Onsemi

2SJ646(TP) by Onsemi

2SJ646(TP) by Onsemi is a P-CHANNEL FET with 8A max drain current and 15W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling like motor control systems or power supplies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,896 parts In-Stock

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Vyrian

USA . 445 parts In-Stock

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445

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 354 parts In-Stock

1+ parts

$440.059

100+ parts

$431.257

1k+ parts

$426.857

10k+ parts

$422.456

354

$440.059

$431.257

$426.857

$422.456

Northwest PG Solutions

USA . 2,338 parts In-Stock

1+ parts

$484.064

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2,338

$484.064

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Problanco Electronics

Mexico . 7,224 parts In-Stock

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7,224

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TANS Electronics

Latvia . 5,579 parts In-Stock

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5,579

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SupplyDigital Components

Austria . 4,966 parts In-Stock

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4,966

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Kulean Microsystems

USA . 3,274 parts In-Stock

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Corphita

USA . 2,440 parts In-Stock

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2,440

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UHIMA Technologies

Türkiye . 458 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Unlock a world of possibilities with the 2SJ646(TP) P-CHANNEL transistor by Onsemi. Known for their superior quality and reliability, Onsemi has been a trusted name in the industry for years. This versatile transistor is perfect for a wide range of applications, offering enhanced performance and efficiency. Whether you're looking to improve power management or enhance signal processing, the 2SJ646(TP) is sure to meet your needs. Experience the value and benefits that Onsemi's technology can bring to your projects today.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high efficiency and low power consumption, making this product a good choice for applications where energy efficiency is a priority.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the circuit, making it easier to integrate into various systems.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer fast switching speeds and low on-resistance, making this product suitable for high-speed applications that require precise control.

Maximum Drain Current (Abs) (ID): 8 A

With a maximum drain current of 8A, this transistor can handle higher power loads, making it ideal for applications that require a higher current capacity.

Maximum Power Dissipation (Abs): 15 W

The high maximum power dissipation of 15W allows the transistor to handle heat better, ensuring reliability and longevity in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers excellent performance and reliability, making this product suitable for demanding applications that require high stability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperatures, making it suitable for applications that require extended operation under harsh conditions.

Technical Specifications

Other Function Transistors 2SJ646(TP) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ646(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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