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2SJ632

Onsemi

2SJ632 by Onsemi

The Onsemi 2SJ632 is a P-CHANNEL transistor with a max drain current of 2A and power dissipation of 3.5W. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount configurations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,029 parts In-Stock

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Vyrian

USA . 600 parts In-Stock

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600

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Native Components

USA . 697 parts In-Stock

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$0.204

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$0.196

697

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$0.196

Northwest PG Solutions

USA . 1,867 parts In-Stock

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$0.225

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$0.198

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$0.198

Kepictronics

USA . 306,000 parts In-Stock

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306,000

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SupplyDigital Components

Austria . 3,754 parts In-Stock

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Problanco Electronics

Mexico . 2,327 parts In-Stock

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Kulean Microsystems

USA . 1,282 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

USA . 772 parts In-Stock

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TANS Electronics

Latvia . 398 parts In-Stock

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Corohmni

South Africa . 224 parts In-Stock

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Overview

Elevate your electronic projects with the 2SJ632 P-Channel transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications. The 2SJ632 offers customers exceptional value with its single configuration, surface mount capability, and enhancement mode operation. With a maximum drain current of 2A and a power dissipation of 3.5W, this metal-oxide semiconductor transistor can handle various tasks with ease. Trust Onsemi to provide you with the tools you need to bring your designs to life.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high efficiency and low power consumption, making them a good choice for applications where power efficiency is important.

Configuration: SINGLE

Having a single configuration simplifies the design and makes the product easier to integrate into circuits.

Surface Mount: YES

Surface mount transistors are easy to work with and are suitable for automated assembly processes, making them a convenient choice for mass production.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control and higher efficiency compared to depletion mode transistors, making them a good choice for various applications.

Maximum Drain Current (Abs) (ID): 2 A

A high drain current rating allows the transistor to handle higher power loads, making it suitable for applications that require high current capabilities.

Maximum Power Dissipation (Abs): 3.5 W

With a high power dissipation rating, this transistor can handle greater power levels without overheating, ensuring reliable operation in demanding environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high-speed performance, low noise, and low power consumption, making it a versatile choice for various electronic applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably in high-temperature environments, making it suitable for industrial and automotive applications.

Technical Specifications

Other Function Transistors 2SJ632 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ632 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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