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2SJ629

Onsemi

2SJ629 by Onsemi

The Onsemi 2SJ629 is a P-CHANNEL transistor with a max drain current of 4.5A and power dissipation of 3.5W in enhancement mode. Ideal for applications requiring high power handling, it operates at up to 150 °C, making it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,918 parts In-Stock

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Vyrian

USA . 1,333 parts In-Stock

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1,333

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Distributors (Availability)

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Native Components

USA . 572 parts In-Stock

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$1.070

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572

$1.070

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Northwest PG Solutions

USA . 727 parts In-Stock

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$1.177

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727

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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Problanco Electronics

Mexico . 7,595 parts In-Stock

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7,595

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TANS Electronics

Latvia . 7,531 parts In-Stock

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Kulean Microsystems

USA . 3,092 parts In-Stock

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3,092

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SupplyDigital Components

Austria . 1,429 parts In-Stock

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Corphita

USA . 1,229 parts In-Stock

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UHIMA Technologies

Türkiye . 261 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Overview

Upgrade your electronics with the high-quality 2SJ629 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers reliable products that exceed expectations. The 2SJ629 is a P-CHANNEL transistor that offers enhanced performance and efficiency for a wide range of applications. With a maximum drain current of 4.5 A and a maximum power dissipation of 3.5 W, this transistor is designed to meet the demands of modern technology. Trust Onsemi to provide you with superior components that bring value and reliability to your projects.

Feature Benefit Bullets

Polarity or Channel Type - P-CHANNEL

P-Channel transistors are more suitable for high-side switching applications, making this product versatile and suitable for a wide range of circuit designs.

Configuration - SINGLE

A single configuration simplifies circuit design and makes installation and integration easier, offering greater convenience to users.

Surface Mount - YES

Being surface mountable, this product is suitable for compact and densely populated circuit boards, saving space and enabling efficient design layouts.

Operating Mode - ENHANCEMENT MODE

Enhancement mode operation allows for easy control and modulation of the transistor's conductivity, providing precise and efficient performance in various applications.

Maximum Drain Current (Abs) (ID) - 4.5 A

With a high maximum drain current capacity, this transistor can handle substantial current loads, making it ideal for power applications requiring reliable and robust performance.

Maximum Power Dissipation (Abs) - 3.5 W

The high maximum power dissipation capability ensures the transistor can effectively handle heat dissipation, contributing to its overall reliability and longevity in operation.

Field Effect Transistor Technology - METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and performance, ensuring low power consumption and temperature stability, making this transistor an energy-efficient choice.

Maximum Operating Temperature - 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature environments, enabling reliable operation in a variety of challenging conditions.

Technical Specifications

Other Function Transistors 2SJ629 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ629 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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