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2SJ645(TP-FA)

Onsemi

2SJ645(TP-FA) by Onsemi

The Onsemi 2SJ645(TP-FA) is a P-CHANNEL transistor with a max drain current of 8A and power dissipation of 20W. It operates in enhancement mode with METAL-OXIDE SEMICONDUCTOR technology, suitable for applications requiring high power handling in surface mount configurations at up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,432 parts In-Stock

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Vyrian

USA . 2,339 parts In-Stock

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2,339

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Distributors (Availability)

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Native Components

USA . 146 parts In-Stock

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$38.015

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$36.494

146

$38.015

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$36.494

Northwest PG Solutions

USA . 950 parts In-Stock

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$41.816

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950

$41.816

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Problanco Electronics

Mexico . 8,090 parts In-Stock

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8,090

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TANS Electronics

Latvia . 6,189 parts In-Stock

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6,189

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SupplyDigital Components

Austria . 4,306 parts In-Stock

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Corphita

USA . 1,930 parts In-Stock

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1,930

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Kulean Microsystems

USA . 1,473 parts In-Stock

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1,473

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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Overview

Unlock the power of innovation with the 2SJ645(TP-FA) by Onsemi. Crafted with precision and expertise, this P-CHANNEL transistor offers unparalleled performance and reliability in a variety of applications. Experience enhanced efficiency and productivity with its single configuration and metal-oxide semiconductor technology. From consumer electronics to industrial automation, this transistor is the perfect choice for those seeking top-notch quality and exceptional value. Trust Onsemi to deliver cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low ON-state resistance, which allows for efficient operation and reduced power consumption.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to integrate this transistor into various applications.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on PCBs, saving space and improving overall system reliability.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE operation ensures high switching speeds and low on-resistance, making it suitable for applications requiring high efficiency.

Maximum Drain Current (Abs) (ID): 8 A

With a high maximum drain current rating of 8A, this transistor can handle heavy loads and offer reliable performance in demanding applications.

Maximum Power Dissipation (Abs): 20 W

The high power dissipation capability of 20W ensures that the transistor can operate under stressful conditions without overheating, increasing its overall reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology offers low input capacitance and high output impedance, making this transistor ideal for high-frequency applications and low-power consumption.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, ensuring stable operation in a variety of environments.

Technical Specifications

Other Function Transistors 2SJ645(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ645(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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