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2SJ643

Onsemi

2SJ643 by Onsemi

The Onsemi 2SJ643 is a P-CHANNEL FET with 6A max drain current and 10W max power dissipation. It operates in enhancement mode with a max temperature of 150 °C. Ideal for applications requiring high power handling and efficient switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,512 parts In-Stock

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Digiode

USA . 783 parts In-Stock

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Kulean Microsystems

USA . 3,346 parts In-Stock

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3,346

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TANS Electronics

Latvia . 3,109 parts In-Stock

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Northwest PG Solutions

USA . 2,067 parts In-Stock

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SupplyDigital Components

Austria . 1,839 parts In-Stock

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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696

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Corphita

USA . 572 parts In-Stock

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Problanco Electronics

Mexico . 486 parts In-Stock

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Corohmni

South Africa . 428 parts In-Stock

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Native Components

USA . 13 parts In-Stock

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Overview

Looking for a reliable P-CHANNEL transistor for your electronic projects? Look no further than the 2SJ643 by Onsemi. With a maximum drain current of 6A and a power dissipation of 10W, this transistor offers exceptional performance and durability. Perfect for a wide range of applications, from power management to amplification, this transistor is sure to meet your needs. Trust in Onsemi's reputation for producing high-quality components and invest in the 2SJ643 for unmatched value and reliability.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance and high current-carrying capability, making them suitable for high power applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors only conduct current when a gate voltage is applied, providing better control and efficiency in switching applications.

Maximum Drain Current (Abs): 6 A

A maximum drain current of 6 A allows this transistor to handle high current loads without overheating or becoming damaged.

Maximum Power Dissipation (Abs): 10 W

With a maximum power dissipation of 10 W, this transistor can handle high power levels and operate reliably under challenging conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor transistors offer high input impedance and low power consumption, making them ideal for amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures and maintain performance in harsh environments.

Technical Specifications

Other Function Transistors 2SJ643 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2SJ643 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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