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2SJ612

Onsemi

2SJ612 by Onsemi

The Onsemi 2SJ612 is a P-CHANNEL transistor with a max drain current of 2.5A and power dissipation of 3.5W in enhancement mode. Ideal for applications requiring high power handling, it operates at temperatures up to 150 °C and utilizes metal-oxide semiconductor technology for efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,209 parts In-Stock

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Vyrian

USA . 883 parts In-Stock

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Native Components

USA . 559 parts In-Stock

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$1.754

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559

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Northwest PG Solutions

USA . 204 parts In-Stock

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$1.929

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Kepictronics

USA . 306,000 parts In-Stock

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TANS Electronics

Latvia . 7,392 parts In-Stock

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SupplyDigital Components

Austria . 2,801 parts In-Stock

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Kulean Microsystems

USA . 2,402 parts In-Stock

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Problanco Electronics

Mexico . 2,220 parts In-Stock

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Corphita

USA . 1,227 parts In-Stock

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Corohmni

South Africa . 304 parts In-Stock

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UHIMA Technologies

Türkiye . 288 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2SJ612 P-CHANNEL transistor. Manufactured by industry leader Onsemi, this single-configured transistor is designed for enhancement mode operation, offering a maximum drain current of 2.5 A and a power dissipation of 3.5 W. Ideal for a variety of applications, this high-quality transistor utilizes metal-oxide semiconductor technology to deliver reliable performance. Experience the value and benefits of the 2SJ612, where quality meets efficiency for all your electronic needs.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance and high current-carrying capability, making them ideal for high-power applications.

Configuration: SINGLE

Single configuration transistors are simpler to design and implement, providing straightforward operation and reducing complexity in circuitry.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB layouts, making the product suitable for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control of the current flow, providing precise switching capabilities for various circuit designs.

Maximum Drain Current (Abs) (ID): 2.5 A

With a high maximum drain current, this transistor can handle heavy loads and high power applications reliably.

Maximum Power Dissipation (Abs): 3.5 W

The high power dissipation capability ensures the transistor can operate efficiently without overheating, enhancing its reliability in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making the transistor suitable for critical applications where stability is crucial.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand challenging thermal conditions, ensuring reliable operation in various environments.

Technical Specifications

Other Function Transistors 2SJ612 attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ612 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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