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2SJ637(TP-FA)

Onsemi

2SJ637(TP-FA) by Onsemi

The Onsemi 2SJ637(TP-FA) is a P-CHANNEL FET with 5A max drain current and 20W max power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,691 parts In-Stock

1+ parts

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1,691

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Digiode

USA . 574 parts In-Stock

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574

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 570 parts In-Stock

1+ parts

$0.140

100+ parts

-

1k+ parts

-

10k+ parts

$0.134

570

$0.140

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-

$0.134

Northwest PG Solutions

USA . 1,619 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

-

10k+ parts

$0.136

1,619

$0.154

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-

$0.136

Kulean Microsystems

USA . 3,184 parts In-Stock

1+ parts

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3,184

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Problanco Electronics

Mexico . 2,990 parts In-Stock

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2,990

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TANS Electronics

Latvia . 2,700 parts In-Stock

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2,700

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Corphita

USA . 1,841 parts In-Stock

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1,841

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SupplyDigital Components

Austria . 1,123 parts In-Stock

1+ parts

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1,123

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UHIMA Technologies

Türkiye . 715 parts In-Stock

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715

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Corohmni

South Africa . 191 parts In-Stock

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191

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Overview

Unleash the power of innovation with the 2SJ637(TP-FA) by Onsemi. This P-CHANNEL field effect transistor offers unparalleled performance and reliability, setting a new standard in the industry. Ideal for a wide range of applications, this product delivers exceptional efficiency and precision. Trust in Onsemi's legacy of excellence and experience the value of cutting-edge technology at your fingertips. Elevate your projects with the 2SJ637(TP-FA) and discover the limitless possibilities it holds for your success.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their high input impedance, making them suitable for use in low-power applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to incorporate this transistor into various electronic devices.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB layout, saving space and reducing manufacturing costs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the switching behavior, leading to improved performance and efficiency in electronic circuits.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current of 5 A, this transistor is capable of handling higher power levels, making it suitable for a wide range of applications.

Maximum Power Dissipation (Abs) 20 W

The high maximum power dissipation of 20 W allows the transistor to operate at high power levels without overheating, ensuring reliability and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and performance, making this transistor a reliable choice for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the transistor can withstand temperature variations without compromising its performance, making it suitable for harsh environments.

Technical Specifications

Other Function Transistors 2SJ637(TP-FA) attributes and parameters. Explore more Other Function Transistors devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

2SJ637(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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