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BFR520,235

NXP Semiconductors

BFR520,235 by NXP Semiconductors

NXP Semiconductors' BFR520,235 is an NPN transistor with a single configuration and surface-mount capability. It features a max power dissipation of 0.3W, min DC current gain of 60, and max operating temp of 150°C. Ideal for applications requiring low collector current such as signal amplification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 10,223 parts In-Stock

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Anansix

USA . 2,669 parts In-Stock

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VNN

France . 1,779 parts In-Stock

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Digiode

USA . 685 parts In-Stock

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Nova Conductors

Japan . 36 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,255 parts In-Stock

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$1.174

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$1.174

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Corohmni

South Africa . 921 parts In-Stock

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$1.589

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Ampacity Inc.

Singapore . 1,038 parts In-Stock

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$14.050

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AZTECH Wire

Italy . 385 parts In-Stock

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$18.427

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Semicontronic

India . 294 parts In-Stock

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$37.050

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$36.124

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$35.938

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294

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One Stop Electronics

USA . 533 parts In-Stock

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$61.050

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533

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Corphita

USA . 4,650 parts In-Stock

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UNI Independent Distributors

Spain . 3,917 parts In-Stock

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Continental Prestige Electronics

USA . 898 parts In-Stock

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Argo Parts USA

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534

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Microchip USA

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427

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of innovation with the BFR520,235 by NXP Semiconductors. This high-quality NPN transistor offers unmatched reliability and performance in a variety of applications. From amplifiers to oscillators, this versatile component delivers maximum power dissipation and superior DC current gain. With surface mount capabilities and a temperature range up to 150°C, the BFR520,235 is the perfect choice for your next project. Experience the value and benefits that only NXP Semiconductors can provide.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making the product easier to integrate into electronic systems.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels and prevent overheating in the circuit.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures signal amplification and reliable performance in various electronic applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to function effectively in demanding environments.

Maximum Collector Current (IC): 0.07 A

With a maximum collector current of 0.07 A, this transistor can handle moderate current loads and provide efficient signal switching.

Terminal Finish: TIN

TIN terminal finish provides good electrical conductivity and solderability, ensuring a reliable connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures efficient soldering during assembly without damaging the transistor.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables reliable solder joints and proper integration into the PCB during assembly.

Technical Specifications

Other Function Transistors BFR520,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFR520,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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