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BFR520/C,215

NXP Semiconductors

BFR520/C,215 by NXP Semiconductors

NXP Semiconductors' BFR520/C,215 is an NPN transistor with a max power dissipation of 0.3W and max collector current of 0.07A. With a min DC current gain of 60, it operates up to 175°C making it ideal for various electronic applications requiring a single configuration surface mount transistor.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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VNN

France . 1,774 parts In-Stock

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Anansix

USA . 668 parts In-Stock

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Digiode

USA . 521 parts In-Stock

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521

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Vyrian

USA . 512 parts In-Stock

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Nova Conductors

Japan . 96 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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$0.689

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99

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Aztec Data Supply Inc.

USA . 823 parts In-Stock

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$1.237

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AZTECH Wire

Italy . 512 parts In-Stock

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$12.962

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Semicontronic

India . 207 parts In-Stock

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$39.050

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$38.074

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$37.878

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One Stop Electronics

USA . 959 parts In-Stock

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$44.050

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Ampacity Inc.

Singapore . 874 parts In-Stock

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$59.050

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Argo Parts USA

USA . 2,990 parts In-Stock

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UNI Independent Distributors

Spain . 1,676 parts In-Stock

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Corphita

USA . 873 parts In-Stock

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Continental Prestige Electronics

USA . 681 parts In-Stock

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Bastille Electronics

Australia . 30 parts In-Stock

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Overview

Unleash the power of innovation with the BFR520/C,215 by NXP Semiconductors. This cutting-edge NPN transistor offers unparalleled quality and reliability, making it a top choice for a wide range of applications. From amplifiers to oscillators, this versatile component delivers exceptional performance and efficiency. Trust in NXP Semiconductors' renowned expertise in semiconductor technology to bring you a product that exceeds expectations. Elevate your projects with the BFR520/C,215 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching and amplification, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making this product easy to use.

Surface Mount: YES

Surface mount capability allows for compact and space-saving designs, ideal for modern electronics.

Maximum Power Dissipation (Abs): 0.3 W

With a high power dissipation capacity, this product can handle higher loads without overheating.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures reliable and efficient amplification in electronic circuits.

Maximum Operating Temperature: 175 °C

With a high operating temperature limit, this product can withstand harsh conditions and extended use.

Maximum Collector Current (IC): 0.07 A

This product can handle a maximum collector current of 0.07 A, making it suitable for low-power applications.

Technical Specifications

Other Function Transistors BFR520/C,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFR520/C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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