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BFR58

Texas Instruments

BFR58 by Texas Instruments

BFR58 by Texas Instruments is an NPN transistor with a max power dissipation of 5W and a min DC current gain of 25. With a max operating temperature of 175°C, it is suitable for applications requiring a collector current of up to 0.1A and a transition frequency of 90MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,507 parts In-Stock

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5,507

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Digiode

USA . 3,260 parts In-Stock

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3,260

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Distributors (Availability)

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Parana Technologies

USA . 1,154 parts In-Stock

1+ parts

$1.073

100+ parts

-

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$1.924

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1,154

$1.073

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$1.924

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DigiPath Technology Company

USA . 1,714 parts In-Stock

1+ parts

$1.182

100+ parts

$1.087

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1,714

$1.182

$1.087

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ChromeModa Solutions

Germany . 372 parts In-Stock

1+ parts

$1.206

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$0.989

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372

$1.206

$0.989

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IDEA Electronic Components Group

UK . 172 parts In-Stock

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$1.206

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-

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$1.085

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172

$1.206

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$1.085

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Semicontronic

India . 1,237 parts In-Stock

1+ parts

$4.050

100+ parts

$3.949

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$3.928

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1,237

$4.050

$3.949

$3.928

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Ampacity Inc.

Singapore . 1,528 parts In-Stock

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$19.050

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1,528

$19.050

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AZTECH Wire

Italy . 846 parts In-Stock

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$19.630

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846

$19.630

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One Stop Electronics

USA . 1,142 parts In-Stock

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$29.050

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1,142

$29.050

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Northwest PG Solutions

USA . 918 parts In-Stock

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918

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Corphita

USA . 613 parts In-Stock

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Native Components

USA . 359 parts In-Stock

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359

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Corohmni

South Africa . 180 parts In-Stock

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Overview

Discover the superior quality and reliability of the BFR58 by Texas Instruments, a top-of-the-line NPN transistor. With a maximum power dissipation of 5W and a nominal transition frequency of 90MHz, this transistor is perfect for a wide range of applications. Trust in Texas Instruments' reputation for excellence in semiconductor manufacturing and experience the value and benefits that the BFR58 brings to your projects. Upgrade your electronics with the BFR58 and unlock new possibilities today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and compatible with a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic devices.

Maximum Power Dissipation (Abs): 5 W

With a high maximum power dissipation of 5 W, this transistor can handle large loads and operate reliably in demanding conditions.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain of 25 indicates good amplification capabilities, ensuring efficient signal processing and performance.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows this transistor to withstand elevated temperatures and maintain stability during operation.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A enables the transistor to handle moderate current levels, making it suitable for various electronic circuits.

Nominal Transition Frequency (fT): 90 MHz

With a high nominal transition frequency of 90 MHz, this transistor is capable of fast switching speeds and high-frequency performance, ideal for applications requiring rapid signal processing.

Technical Specifications

Other Function Transistors BFR58 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFR58 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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