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BFR57

Texas Instruments

BFR57 by Texas Instruments

BFR57 by Texas Instruments is an NPN transistor with a max power dissipation of 5W and fT of 90MHz. With hFE of 25, it's ideal for low-power applications like signal amplification in circuits requiring a single configuration. Operating up to 175°C, it can handle collector current up to 0.1A efficiently.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 6,260 parts In-Stock

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Digiode

USA . 3,305 parts In-Stock

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Holdelec - ElecDif-Pro

France . 48 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Parana Technologies

USA . 56 parts In-Stock

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$1.768

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$2.336

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56

$1.768

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$2.336

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DigiPath Technology Company

USA . 2,295 parts In-Stock

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$1.946

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$1.791

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$1.946

$1.791

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IDEA Electronic Components Group

UK . 1,422 parts In-Stock

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$1.986

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$1.787

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1,422

$1.986

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$1.787

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ChromeModa Solutions

Germany . 27 parts In-Stock

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$1.986

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$1.629

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27

$1.986

$1.629

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AZTECH Wire

Italy . 440 parts In-Stock

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$9.367

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One Stop Electronics

USA . 917 parts In-Stock

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$39.050

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917

$39.050

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Corphita

USA . 2,545 parts In-Stock

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Northwest PG Solutions

USA . 2,104 parts In-Stock

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Native Components

USA . 293 parts In-Stock

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Overview

Upgrade your electronics with the BFR57 by Texas Instruments, a high-quality NPN transistor that offers reliability and precision. Manufactured by a trusted leader in the industry, this transistor is perfect for a wide range of applications, from amplifiers to switching circuits. Experience the value and benefits of using the BFR57, with its maximum power dissipation of 5W and minimum DC current gain of 25. Trust in Texas Instruments to deliver cutting-edge technology that meets all your needs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are known for their versatility and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and can be easily integrated into various electronic systems.

Maximum Power Dissipation (Abs): 5 W

With a maximum power dissipation of 5W, this transistor can handle higher power applications, making it suitable for a wide range of uses.

Minimum DC Current Gain (hFE): 25

A higher DC current gain ensures better amplification capabilities and stability in circuits.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for reliable performance in a variety of environmental conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1A ensures that the transistor can handle moderate current flow in the circuit.

Nominal Transition Frequency (fT): 90 MHz

With a high transition frequency of 90MHz, this transistor is ideal for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Other Function Transistors BFR57 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BFR57 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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