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BFQ67W,135

NXP Semiconductors

BFQ67W,135 by NXP Semiconductors

BFQ67W,135 by NXP Semiconductors is a single NPN transistor ideal for surface mount applications. It features a max power dissipation of 0.3 W, hFE of 60, and operates up to 150 °C. This versatile component is perfect for various electronic circuits requiring efficient signal amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,759 parts In-Stock

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3,759

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Vyrian

USA . 3,063 parts In-Stock

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3,063

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Anansix

USA . 1,642 parts In-Stock

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1,642

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Distributors (Availability)

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AZTECH Wire

Italy . 558 parts In-Stock

1+ parts

$15.820

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558

$15.820

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One Stop Electronics

USA . 797 parts In-Stock

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$23.050

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797

$23.050

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Component Stockers USA

USA . 726 parts In-Stock

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$99.990

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726

$99.990

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UNI Independent Distributors

Spain . 3,213 parts In-Stock

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Northwest PG Solutions

USA . 408 parts In-Stock

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408

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Corphita

USA . 377 parts In-Stock

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377

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Native Components

USA . 321 parts In-Stock

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321

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Overview

Elevate your electronic designs with the BFQ67W,135 NPN transistor from NXP Semiconductors. Renowned for their high-quality components, NXP ensures reliability and performance that empowers your projects, whether in consumer electronics or industrial applications. With excellent current gain and robust thermal handling, this surface-mount transistor guarantees efficiency and longevity, giving you peace of mind and a competitive edge in your market.

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration is ideal for a wide range of applications, making this transistor versatile and suitable for most electronic circuits.

Configuration: SINGLE

A single configuration allows for compact designs and is perfect for situations where space is at a premium.

Surface Mount: YES

Surface mount technology enables efficient automated assembly and a reduced footprint, making it great for modern PCB designs.

Maximum Power Dissipation (Abs): 0.3 W

With a power dissipation of 0.3 W, this transistor can handle moderate power applications, ensuring reliability in various operating conditions.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures that the transistor can effectively amplify weak signals, which is crucial in amplifier applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows this transistor to be used in high-temperature environments, enhancing its durability and performance.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor is suitable for low to medium power applications, making it a reliable choice for various designs.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-lasting connections in electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The capability to withstand 30 seconds at peak reflow temperature ensures compatibility with standard soldering processes, making assembly easier.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C indicates that this transistor can be used in high-temperature soldering processes, ensuring its reliability in production.

Technical Specifications

Other Function Transistors BFQ67W,135 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BFQ67W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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