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IRF7751TRPBF

International Rectifier

IRF7751TRPBF by International Rectifier

IRF7751TRPBF by International Rectifier is a P-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring high power efficiency and thermal performance.

Median Price

$1.494

Lifecycle Status

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4

In-Stock Inventory

1k+

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Nova Conductors

Japan . 100 parts In-Stock

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$1.113

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Vyrian

USA . 4,532 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,493 parts In-Stock

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Bristol Electronics

USA . 65 parts In-Stock

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$1.875

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$1.875

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Continental Prestige Electronics

USA . 5,545 parts In-Stock

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$1.113

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$1.091

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Argo Parts USA

USA . 1,934 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Ampacity Inc.

Singapore . 1,275 parts In-Stock

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$3.050

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AZTECH Wire

Italy . 590 parts In-Stock

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$10.000

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QUARKTWIN TECHNOLOGY LTD

USA . 21,322 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the IRF7751TRPBF by International Rectifier. As a trusted manufacturer in the industry, International Rectifier delivers top-notch quality and reliability. Designed for P-CHANNEL applications, this enhancement mode transistor offers a maximum drain current of 4.5A and a power dissipation of 1W, making it perfect for a wide range of electronic devices. Experience the value and benefits this product brings to your projects, from improved performance to enhanced efficiency.Upgrade your electronics with the IRF7751TRPBF and revolutionize the way you work.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their lower on-state resistance and higher current carrying capability, making them suitable for high-power applications.

Surface Mount: YES

Surface mount packages are more compact and efficient, making the product suitable for space-constrained applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easy control and high input impedance, making them ideal for switching applications.

Maximum Drain Current (Abs): 4.5 A

The high maximum drain current rating allows the transistor to handle high current loads without overheating or failing.

Maximum Power Dissipation (Abs): 1 W

With a high power dissipation capability, this transistor can handle power efficiently and effectively.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers low power consumption and high reliability, making the transistor suitable for battery-operated devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate in harsh environments without performance degradation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections and longevity of the product.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates that the product has moderate sensitivity to moisture, making it suitable for a wide range of environments.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures that the product can withstand soldering processes without damaging its components.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand lead-free soldering processes and ensure reliable solder joints.

Technical Specifications

Other Function Transistors IRF7751TRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IRF7751TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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