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IRF7751GTRPBF

International Rectifier

IRF7751GTRPBF by International Rectifier

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 4.5 A; Operating Mode: ENHANCEMENT MODE;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 10,130 parts In-Stock

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10,130

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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1,200

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Technical Specifications

Other Function Transistors IRF7751GTRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRF7751GTRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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