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IRF7703GTRPBF

International Rectifier

IRF7703GTRPBF by International Rectifier

IRF7703GTRPBF by International Rectifier is a P-CHANNEL MOSFET with 6A max drain current and 1.5W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various electronic devices requiring high power efficiency.

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Vyrian

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Nova Conductors

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450

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AZTECH Wire

Italy . 796 parts In-Stock

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$18.175

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Ampacity Inc.

Singapore . 1,188 parts In-Stock

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$31.050

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Experience superior quality and performance with the IRF7703GTRPBF by International Rectifier. As a leading manufacturer in the industry, International Rectifier delivers reliable and innovative solutions for various applications. This P-CHANNEL transistor offers enhanced functionality, making it ideal for a wide range of electronic devices. With a maximum drain current of 6A and maximum power dissipation of 1.5W, this transistor ensures optimal efficiency and durability. Trust International Rectifier to provide top-notch products that exceed expectations. Elevate your projects with the IRF7703GTRPBF today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors can be advantageous in certain circuit designs, such as when working with positive voltage supplies or when dealing with high voltage applications.

Configuration: SINGLE

A single configuration simplifies the circuit design and can make the overall product more reliable and easier to work with.

Surface Mount: YES

Surface mount transistors are smaller and lighter than through-hole components, making them ideal for compact designs and saving space on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to drive and control, providing better efficiency and performance in switching applications.

Maximum Drain Current (Abs) (ID): 6 A

A high maximum drain current allows for handling larger currents, making this transistor suitable for power applications.

Maximum Power Dissipation (Abs): 1.5 W

A high maximum power dissipation rating ensures that the transistor can handle higher power levels without overheating or failing.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good noise performance, high input impedance, and low power consumption, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably in harsh environments or when subjected to high temperatures.

Technical Specifications

Other Function Transistors IRF7703GTRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRF7703GTRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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