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IRF7704GTRPBF

International Rectifier

IRF7704GTRPBF by International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

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Perfect Parts

USA . 560 parts In-Stock

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560

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Microchip USA

USA . 229 parts In-Stock

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100+ parts

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229

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Technical Specifications

Other Function Transistors IRF7704GTRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.6 A

Maximum Drain Current (ID):

4.6 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRF7704GTRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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