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IRF7343ITRPBF

International Rectifier

IRF7343ITRPBF by International Rectifier

IRF7343ITRPBF by International Rectifier is a dual N-CHANNEL and P-CHANNEL transistor with 4.7A max drain current and 2W max power dissipation. Ideal for enhancement mode applications, it operates at up to 150°C, making it suitable for various electronic devices requiring high performance in compact designs.

Median Price

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3

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1k+

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Chip Stock

USA . 48,620 parts In-Stock

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Vyrian

USA . 1,299 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Corohmni

South Africa . 30 parts In-Stock

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$1.652

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Aztec Data Supply Inc.

USA . 2,736 parts In-Stock

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$1.800

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Advanced Electronics

New Zealand . 550 parts In-Stock

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$1.854

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$1.687

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AZTECH Wire

Italy . 761 parts In-Stock

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$14.177

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Ampacity Inc.

Singapore . 423 parts In-Stock

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$58.050

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Kepictronics

USA . 18,578 parts In-Stock

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Argo Parts USA

USA . 3,027 parts In-Stock

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Continental Prestige Electronics

USA . 1,058 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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A-Z Elektronik GmbH

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Overview

Enhance your electronics projects with the IRF7343ITRPBF by International Rectifier! Known for their top-quality components, International Rectifier brings you a versatile N-CHANNEL AND P-CHANNEL transistor that is perfect for various applications. With its enhancement mode operating mode and maximum drain current of 4.7 A, this transistor offers reliable performance and efficient power dissipation. Whether you're working on automotive electronics, industrial control systems, or consumer appliances, the IRF7343ITRPBF provides the value, benefits, and advantages you need to take your designs to the next level. Trust International Rectifier for innovative solutions that deliver results.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This product is versatile and can be used in circuits requiring both N-channel and P-channel transistors.

Surface Mount: YES

The surface mount feature makes it easier to integrate this transistor into compact and densely populated circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures efficient and reliable performance in various applications.

Maximum Drain Current (Abs) (ID): 4.7 A

With a high maximum drain current rating, this transistor can handle heavy loads and provide robust performance.

Maximum Power Dissipation (Abs): 2 W

The high power dissipation capability allows the transistor to handle power efficiently and prevent overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high-speed switching and low power consumption, making this transistor suitable for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures the transistor can operate in challenging environments without compromising performance.

Technical Specifications

Other Function Transistors IRF7343ITRPBF attributes and parameters. Explore more Other Function Transistors devices from International Rectifier

Specs

Maximum Drain Current (Abs) (ID):

4.7 A

Maximum Drain Current (ID):

4.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRF7343ITRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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