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IRF7416QTRPBF

Infineon Technologies

IRF7416QTRPBF by Infineon Technologies

Infineon's IRF7416QTRPBF is a P-CHANNEL MOSFET with 10A max drain current and 2.5W power dissipation. Ideal for enhancement mode operation in surface mount applications, it can handle up to 150°C operating temperature making it suitable for various electronic circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 862 parts In-Stock

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Vyrian

USA . 535 parts In-Stock

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Nova Conductors

Japan . 52 parts In-Stock

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Modulus Dynamics

Lithuania . 3,058 parts In-Stock

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$1.657

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$1.591

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$1.524

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Ampacity Inc.

Singapore . 1,555 parts In-Stock

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$12.050

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AZTECH Wire

Italy . 307 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,523 parts In-Stock

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Kepictronics

USA . 15,868 parts In-Stock

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Metaverse IC Inc.

Canada . 15,868 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,324 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,549 parts In-Stock

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Corphita

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Overview

Discover the power and reliability of the Infineon Technologies IRF7416QTRPBF P-CHANNEL transistor. With a maximum drain current of 10A and a maximum power dissipation of 2.5W, this enhancement mode transistor is ideal for a wide range of applications. From industrial equipment to automotive systems, this high-quality component offers exceptional performance and efficiency. Trust in Infineon Technologies for cutting-edge technology and superior products that deliver value and innovation to your projects.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-state resistance, making them suitable for high-efficiency power management applications.

Configuration: SINGLE

Single configuration transistors are easy to design with and troubleshoot, making them ideal for simpler electronic systems.

Surface Mount: YES

Surface mount transistors are space-saving and allow for automated assembly, making them suitable for compact electronic devices and mass production.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the current flow, leading to improved efficiency and performance in power circuits.

Maximum Drain Current (Abs) (ID): 10 A

With a high maximum drain current, this transistor can handle heavy loads and is suitable for power applications requiring high current capacity.

Maximum Power Dissipation (Abs): 2.5 W

The high maximum power dissipation allows this transistor to handle significant power levels without overheating, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor suitable for demanding applications where stability is crucial.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, making it suitable for harsh environments.

Technical Specifications

Other Function Transistors IRF7416QTRPBF attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

10 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

IRF7416QTRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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