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NJW21194G

Onsemi

NJW21194G by Onsemi

NJW21194G by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration and 4MHz fT. Package style: Flange Mount, Terminal form: Through-Hole.

Median Price

$4.370

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 574 parts In-Stock

1+ parts

$3.860

100+ parts

$1.940

1k+ parts

$1.650

10k+ parts

-

574

$3.860

$1.940

$1.650

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Farnell

UK . 65 parts In-Stock

1+ parts

$4.370

100+ parts

$2.030

1k+ parts

$1.570

10k+ parts

-

65

$4.370

$2.030

$1.570

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Mouser Electronics

USA . 679 parts In-Stock

1+ parts

$5.080

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-

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679

$5.080

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DigiKey

USA . 298 parts In-Stock

1+ parts

$5.080

100+ parts

$2.842

1k+ parts

$1.989

10k+ parts

$1.869

298

$5.080

$2.842

$1.989

$1.869

Element14

Singapore . 65 parts In-Stock

1+ parts

$7.360

100+ parts

$2.700

1k+ parts

$2.640

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65

$7.360

$2.700

$2.640

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Verical

USA . 210 parts In-Stock

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$1.890

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210

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$1.890

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Chip1Stop

Japan . 60 parts In-Stock

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-

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$2.340

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60

-

$2.340

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Distributors (In-Stock)

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Vyrian

USA . 2,202 parts In-Stock

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$2.000

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-

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$2.000

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Digiode

USA . 1,621 parts In-Stock

1+ parts

$3.458

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-

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1,621

$3.458

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Maritex

Poland . 51 parts In-Stock

1+ parts

$7.329

100+ parts

$4.422

1k+ parts

$3.735

10k+ parts

-

51

$7.329

$4.422

$3.735

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Sensible Micro Corp

USA . 191,185 parts In-Stock

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191,185

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ComSIT Distribution GmbH

Germany . 33,349 parts In-Stock

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33,349

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Chip Stock

USA . 3,660 parts In-Stock

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3,660

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Nova Conductors

Japan . 200 parts In-Stock

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200

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NAC Semi

USA . 60 parts In-Stock

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100+ parts

$9.530

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60

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$9.530

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 292 parts In-Stock

1+ parts

$1.990

100+ parts

-

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292

$1.990

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-

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Semicontronic

India . 25 parts In-Stock

1+ parts

$1.990

100+ parts

$1.940

1k+ parts

$1.930

10k+ parts

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25

$1.990

$1.940

$1.930

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$2.340

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164

$2.340

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Corphita

USA . 1,477 parts In-Stock

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$3.276

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1,477

$3.276

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Microchip USA

USA . 5,235 parts In-Stock

1+ parts

$27.300

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5,235

$27.300

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RC Electronics

USA . 40,797 parts In-Stock

1+ parts

-

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$2.680

1k+ parts

$2.450

10k+ parts

$2.380

40,797

-

$2.680

$2.450

$2.380

Perfect Parts

USA . 39,458 parts In-Stock

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39,458

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iodParts Technologies Inc.

India . 39,458 parts In-Stock

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39,458

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Robosynatics

Brazil . 23,617 parts In-Stock

1+ parts

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100+ parts

$2.577

1k+ parts

$2.525

10k+ parts

$2.525

23,617

-

$2.577

$2.525

$2.525

Lucentia Tech

USA . 23,617 parts In-Stock

1+ parts

-

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$2.577

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$2.525

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$2.525

23,617

-

$2.577

$2.525

$2.525

Lixinc

USA . 9,060 parts In-Stock

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9,060

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A-Z Elektronik GmbH

Germany . 7,551 parts In-Stock

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7,551

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Kepictronics

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,157 parts In-Stock

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Argo Parts USA

USA . 3,407 parts In-Stock

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Problanco Electronics

Mexico . 2,663 parts In-Stock

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Continental Prestige Electronics

USA . 2,616 parts In-Stock

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Kulean Microsystems

USA . 2,416 parts In-Stock

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TANS Electronics

Latvia . 2,222 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 385 parts In-Stock

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385

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Overview

Discover the power and reliability of the NJW21194G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for amplifier applications. With its NPN configuration and maximum collector current of 16A, this transistor offers unparalleled performance and efficiency. Manufactured by Onsemi, a trusted industry leader known for producing top-notch electronic components, the NJW21194G provides customers with exceptional value and peace of mind. Whether you're working on audio amplifiers or industrial equipment, this transistor is sure to exceed your expectations with its maximum power dissipation of 200W and durable plastic/epoxy package body material. Elevate your projects with the NJW21194G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and durable, allowing for easy handling and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers due to their ability to amplify signals effectively and efficiently.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into different electronic systems.

Transistor Application: AMPLIFIER

This transistor is specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Maximum Power Dissipation (Abs): 200 W

With a high maximum power dissipation of 200 W, this transistor can handle high power levels without overheating or failing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate in a wide range of environments without overheating.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage of 250 V makes this transistor suitable for applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 16 A

With a maximum collector current of 16 A, this transistor can effectively handle high current levels in different electronic circuits.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4 MHz ensures fast switching speeds and high frequency response, making this transistor ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJW21194G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJW21194G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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