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MJD31CRL

Onsemi

MJD31CRL by Onsemi

MJD31CRL by Onsemi is a NPN BJT transistor with 15W power dissipation, 100V collector-emitter voltage, and 3A collector current. Ideal for amplifier applications, it has a small outline package style and operates up to 140 °C. Suitable for surface mount assembly with Gull Wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 10,350 parts In-Stock

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10,350

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ComSIT Distribution GmbH

Germany . 1,800 parts In-Stock

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1,800

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,608 parts In-Stock

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Digiode

USA . 1,362 parts In-Stock

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1,362

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R&J Components

USA . 1,164 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 483 parts In-Stock

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483

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AZTECH Wire

Italy . 451 parts In-Stock

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$9.040

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451

$9.040

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Component Stockers USA

USA . 234 parts In-Stock

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$99.990

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234

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TANS Electronics

Latvia . 7,075 parts In-Stock

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SupplyDigital Components

Austria . 5,296 parts In-Stock

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Kulean Microsystems

USA . 2,039 parts In-Stock

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Kepictronics

USA . 1,700 parts In-Stock

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Problanco Electronics

Mexico . 1,577 parts In-Stock

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Corphita

USA . 1,577 parts In-Stock

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Perfect Parts

USA . 1,082 parts In-Stock

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UHIMA Technologies

Türkiye . 521 parts In-Stock

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521

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Cyclops Electronics Ltd (Excess)

UK . 483 parts In-Stock

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483

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Corohmni

South Africa . 90 parts In-Stock

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90

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Overview

Enhance your electronic projects with the reliable MJD31CRL power transistor from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and performance in their products. The MJD31CRL is perfect for amplifier applications, offering a maximum collector-emitter voltage of 100V and a maximum collector current of 3A. With a small outline package style and surface-mount capabilities, this transistor provides convenience and versatility in its use. Trust Onsemi to deliver exceptional value and benefits with the MJD31CRL, allowing you to amplify your creativity and innovation effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with existing circuit designs for amplification purposes.

Configuration: SINGLE

The single configuration simplifies the circuit design and assembly process, making it cost-effective and efficient.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and output quality.

Surface Mount: YES

The surface mount capability makes it suitable for compact designs and PCB mounting, saving space and enhancing overall reliability.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering on PCBs, improving overall assembly efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and ease of soldering, ensuring secure connections and long-term reliability.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation capacity, this transistor can handle higher power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating provides flexibility in voltage requirements and ensures stable operation in various voltage conditions.

Maximum Collector Current (IC): 3 A

With a high maximum collector current rating, this transistor can handle higher currents, making it suitable for applications requiring power amplification.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency allows for fast switching speeds and high-frequency operation, making it ideal for amplifier applications that require high-frequency response.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD31CRL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD31CRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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