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MJD32CRL

Onsemi

MJD32CRL by Onsemi

MJD32CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 3A IC, and 15W power dissipation. Ideal for amplifier applications, it has a hFE of 10 and operates up to 140 °C. This Gull Wing package with tin-lead finish is surface mountable and offers a transition frequency of 3MHz.

Median Price

$0.825

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 3,146 parts In-Stock

1+ parts

$0.825

100+ parts

$0.305

1k+ parts

$0.214

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3,146

$0.825

$0.305

$0.214

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Chip Stock

USA . 68,000 parts In-Stock

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Vyrian

USA . 10,362 parts In-Stock

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10,362

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Dan-Mar Components

USA . 3,146 parts In-Stock

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3,146

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Global Solutions Electronics Company

USA . 1,800 parts In-Stock

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1,800

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ACDS - Activité Composants Distribution Service

France . 1,800 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 1,789 parts In-Stock

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R&J Components

USA . 1,197 parts In-Stock

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Digiode

USA . 800 parts In-Stock

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800

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Atlantic Semiconductor

USA . 163 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 850 parts In-Stock

1+ parts

$0.434

100+ parts

$0.430

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$0.412

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850

$0.434

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$0.412

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AZTECH Wire

Italy . 1,039 parts In-Stock

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$12.440

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Kulean Microsystems

USA . 6,317 parts In-Stock

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Problanco Electronics

Mexico . 5,135 parts In-Stock

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TANS Electronics

Latvia . 4,522 parts In-Stock

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SupplyDigital Components

Austria . 2,850 parts In-Stock

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Corphita

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Kepictronics

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UHIMA Technologies

Türkiye . 859 parts In-Stock

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Corohmni

South Africa . 449 parts In-Stock

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Overview

Looking for a reliable Power Bipolar Junction Transistor (BJT) for your amplifier applications? Look no further than the Onsemi MJD32CRL. With a maximum power dissipation of 15W and a maximum collector-emitter voltage of 100V, this PNP transistor offers superior performance and durability. Its small outline package and gull wing terminals make it easy to install, while its high DC current gain ensures optimal amplification. Trust Onsemi's reputation for quality and innovation, and experience the value and benefits that the MJD32CRL brings to your projects. Step up your amplifier game with Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to use and integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in those scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient placement on the PCB.

Terminal Form: GULL WING

Gull wing terminals make soldering easier and more reliable.

No. of Terminals: 2

Two terminals allow for a simple and straightforward connection.

Maximum Power Dissipation (Abs): 15 W

Can handle high power dissipation, suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for applications where space is limited.

Minimum DC Current Gain (hFE): 10

Reliable minimum DC current gain ensures consistent performance.

Maximum Operating Temperature: 140 °C

Capable of operating at high temperatures without degradation, suitable for challenging environments.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows for use in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material provides good electrical properties, ensuring high performance.

Maximum Collector Current (IC): 3 A

Capable of handling high collector currents, suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity.

Terminal Position: SINGLE

Single terminal position simplifies the circuit connection.

Case Connection: COLLECTOR

Collector case connection is suitable for many amplifier applications.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 3 MHz

Nominal transition frequency is suitable for amplifier applications requiring high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD32CRL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD32CRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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